STS10DN3LH5

Series:	STripFET™ V
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	10A
Rds On (Max) @ Id, Vgs:	21 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:	475pF @ 25V
Power - Max:	2.5W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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STS10DN3LH5 is a small-signal P-channel field-effect transistor (FET). It has three leads and is specifically designed to be used with power circuits. As such, it is used as a low-side switch in various applications, including power management circuits and audio amplifiers.

Overview

The STS10DN3LH5 transistor is an enhancement-mode FET that is made using the DMOS process. It has a low gate threshold voltage, allowing it to turn on with minimal applied gate voltage. This makes it well suited for use in low power circuits as well as high power ones.The STS10DN3LH5 is a three-lead transistor array, with all three leads compatible with surface mount technology (SMT). This array allows for easy connection with other components, as it only requires three separate wires for connection. The size of the transistor makes it ideal for a wide range of applications, as it takes up minimal space.

Application Field

The STS10DN3LH5 is often used in power management applications. Its low gate threshold voltage enables it to turn on quickly, making it useful as a low-side switch. This makes it an ideal choice for converters, such as buck and boost converters. It can also be used in audio amplifiers, as it can reduce power consumption with its low voltage operation.The size of the transistor also makes it suitable for use in portable devices and other small-space applications. It is also suitable for use in automotive applications, as it can withstand large temperature ranges.

Working Principle

The STS10DN3LH5 is an enhancement-mode FET, which means that it is turned on when a positive voltage is applied to the gate. This is because the source and drain terminals have a reverse bias, meaning that they have an electrical potential difference, with the source at a lower voltage than the drain. A positive voltage applied to the gate causes electrons to move from the source to the drain, creating an inversion layer between the source and drain. This inversion layer begins to conduct current, allowing current to flow between the source and drain. The amount of current that flows is determined by the gate voltage, allowing the transistor to be used as an amplifier or switch.

Conclusion

The STS10DN3LH5 is a small-signal P-channel field-effect transistor array. It is designed for use in power management applications, such as buck and boost converters, audio amplifiers, and portable devices. It is an enhancement-mode FET, which means that it is turned on with a positive gate voltage. This makes it well suited for low power circuits, as it only requires minimal voltage to turn on. The size of the transistor, along with its low gate threshold voltage and wide range of applications, makes the STS10DN3LH5 an ideal choice for many circuits.

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