STS12NF30L Discrete Semiconductor Products

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The STS12NF30L is a Field Effect Transistor (FET) that is often utilized in low-voltage power applications such as switching, boosting, power management, and voltage regulation. This device is a single N-channel FET with a maximum drain-source voltage of 30 volts, a drain current maximum at 12 amps, and a maximum power dissipation of 72 watts. This device also has a low on-state resistance and is capable of fast switching speeds. The STS12NF30L is best suited for use as a high- current switch for both static and pulsed conditions.

The STS12NF30L is constructed using a silicon-gate process and consists of a silicon semiconductor substrate, a source metallization, a gate metallization, and a drain metallization. The source metallization provides the electrical connection to the substrate while the gate metallization acts as the input to the gate controlling the flow of current through the channel. The drain metallization controls the current flow between the source and drain and is connected to the power line. The control of the gate metallization effectively turns the device ON and OFF.

The basic operating principle of the STS12NF30L is that of a classic FET. When a voltage is applied to the gate, electron charges move to the source region forming a two-dimensional surface of electron flow or channel. By varying the voltage on the gate, the width of the channel can be changed, thus controlling the amount of current that can flow between the source and the drain.

The STS12NF30L offers many advantages as a low-voltage device. It is capable of supplying a large amount of current at low input voltages and is perfect for switching, boosting, and power management applications. Furthermore, its small size and efficiency makes the STS12NF30L highly suitable for high-density, low-power design projects. The excellent performance and low cost of the STS12NF30L make it the perfect choice for a budget-constrained project.

The STS12NF30L is a single N-channel FET which offers excellent performance, low on-state resistance, and fast switching speeds making it the perfect choice for low-voltage, low-power applications and is ideal for both static and pulsed conditions. The device is efficient, small, and cost-effective making it perfect for high-density applications, voltage regulation, and power management.

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