Allicdata Part #: | STS1DNF20-ND |
Manufacturer Part#: |
STS1DNF20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 8SOIC |
More Detail: | Mosfet Array |
DataSheet: | STS1DNF20 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | -- |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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STS1DNF20 is an array of trench-gate field effect transistors (FETs) commonly used in power semiconductor circuits. The device was developed by Toshiba Corporation and is widely used in a variety of power supply applications, including power conditioning, load control and pulse-synchronization. STS1DNF20 has been designed specifically for high-power applications, and it is capable of providing a high current gain (Hfe) even at low gate voltages. It also has a low on-state resistance (RDS). The device is highly reliable and offers excellent thermal performance, making it an ideal choice for high-power applications.
The STS1DNF20 array consists of two series of FETs - one N channel (N) and one P channel (P) - connected in parallel. This configuration provides both low on-state resistance and high current gain. The N channel FET consists of a body region is connected to a source region, while the P channel consists of a body region connected to a drain region. Both FETs are connected to separate gate electrodes. The N channel FET is further connected to a D-type output terminal, while the P channel FET is connected to an N-type output terminal.
The operation of the STS1DNF20 array is based on the principle of current conduction and is determined by the voltage between the gate and source (VGS) of the FETs. When the gate voltage of the N channel FET is higher than the source voltage, the transistor will be on and will conduct current, while when the gate voltage of the P channel FET is lower than the source voltage, the transistor will be off and will not conduct current. By controlling the gate voltages of the two FETs, the STS1DNF20 can be used to perform operations like load control and pulse-synchronization.
The STS1DNF20 array is commonly used in power supply applications due to its high current gain and low on-state resistance. It is also highly reliable, as it is constructed from high-quality materials and has been tested for various types of applications. Additionally, it has excellent thermal performance, making it a suitable component for power applications in harsh environments. It is also highly cost-effective, making it an attractive choice for high power systems.
In conclusion, the STS1DNF20 array is a highly reliable and cost-effective power semiconductor array. It is capable of providing a high current gain and low on-state resistance, making it an ideal choice for high-power applications. Additionally, its thermal performance is excellent and it is easy to use and maintain, making it a suitable component for a variety of power supply operations.
The specific data is subject to PDF, and the above content is for reference
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