Allicdata Part #: | 497-4120-2-ND |
Manufacturer Part#: |
STS10PF30L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET P-CH 30V 10A 8-SOIC |
More Detail: | P-Channel 30V 10A (Tc) 2.5W (Tc) Surface Mount 8-S... |
DataSheet: | STS10PF30L Datasheet/PDF |
Quantity: | 1000 |
Series: | STripFET™ II |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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STS10PF30L is a three-terminal N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) developed by the well-known semiconductor company STMicroelectronics. This device is designed using their advanced high-voltage MOSFET technology and is ideally suited for power management applications such as linear and switching power supplies, DC-DC converters, commutation circuits and solenoid driver circuits.
Compared to standard power MOSFETs, STS10PF30L offers improved efficiency and better thermal performance. It utilizes an advanced technology which drastically reduces switching and conduction losses while maintaining excellent Avalanche reliability. In addition, the device has a safe operating area (SOA) which allows for operation up to a specified power dissipation. The SOA provides protection against abrupt failure under fault conditions.
The STS10PF30L is a three-terminal N-channel MOSFET which consists of source, drain and gate terminals. The source terminal is used for input signals and is connected to the control gate. When a voltage is applied to the gate, a charge is induced which creates an electric field in the drain-channel region leading to current conduction along the channel. This electrical field modulates the conductivity of the channel by repulsion between electrons in the channel and positive gate voltage. The higher the gate-source voltage, the lower the resistance in the channel and the larger the current conducted.
The STS10PF30L is specifically designed for medium to high power switching applications due to its high breakdown voltage rating of 600V and low on-state resistance of 0.16Ω. It has a wide range of service temperatures, with a minimum of -55°C and maximum of 150°C which makes it highly reliable in operation. The device also has a low total gate charge of 5.4nC and a fast switching speed for high speed systems.
The STS10PF30L is also designed for reverse polarity protection, and can perform as a low loss diode up to 1.2A. This feature is especially useful in high power applications, as it allows for the dynamic protection of circuits from overcurrent and overvoltage conditions. In addition, the device is internally protected against electro-static discharge (ESD) up to 8kV, ensuring robust operation even in the presence of harsh environmental conditions.
The STS10PF30L is a reliable and cost-effective solution for medium to high power switching applications. Its wide range of service temperature and on-state resistance, along with its reverse polarity protection and ESD tolerances make it ideal for use in a variety of power management applications. It is an excellent choice for those looking for reliable and efficient power MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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