Allicdata Part #: | 497-10310-2-ND |
Manufacturer Part#: |
STS11N3LLH5 |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 11A 8-SOIC |
More Detail: | N-Channel 30V 11A (Tc) 2.7W (Tc) Surface Mount 8-S... |
DataSheet: | STS11N3LLH5 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.22061 |
Series: | STripFET™ V |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 4.5V |
Vgs (Max): | +22V, -20V |
Input Capacitance (Ciss) (Max) @ Vds: | 724pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.7W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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STS11N3LLH5 belongs to the family of single transistors known as field effect transistors (FETs). These transistors are found in many types of electronic components and make up the majority of transistors found in modern circuits. It is important to know how they work to determine which type of FET is best suited for a particular application. This article will discuss the field of application and working principles of an STS11N3LLH5.
Application Field of the STS11N3LLH5
The STS11N3LLH5 is a high-performance field effect transistor (FET) designed for large-signal RF applications such as radio transmitters and receivers. It is an enhancement-mode FET, meaning that it requires an applied gate voltage to turn on the FET. The STS11N3LLH5 operates from a wide frequency range from 10 MHz to 1 GHz. It provides excellent linearity and gain, making it ideal for high-power amplifiers and other RF applications.
Other applications of the STS11N3LLH5 include RF power amplifiers, RF modulators, and linear microwave power amplifiers. Its high-power and linearity characteristics make it particularly suitable for these applications. In addition, the device can also be used in analog switching, data conversion, and communications systems.
Working Principle of the STS11N3LLH5
The STS11N3LLH5 works by exploiting the effects of field-effect transistor (FET) theory. Under FET theory, an electric field is created between the source and the drain, allowing current to flow through the device. By controlling the strength of the electric field, an FET can be used to control the current through the device. This is known as enhancement-mode operation, where the FET is turned on by applying a positive voltage to the gate.
The STS11N3LLH5 also has additional features and characteristics that are not available with other types of FETs. It has excellent linearity characteristics and very low on-resistance, making it ideal for high-power applications such as RF power amplifiers. The design of the device also ensures very low gate-drain capacitance, enabling it to operate at higher frequencies.
In addition, the device is designed to have a very low input capacitance, making it ideal for applications where a large signal voltage is required. The input capacitance of the STS11N3LLH5 is much lower than that of other similar FETs, allowing it to operate with a much higher frequency range. This makes it more suitable for applications such as RF modulators and microwave power amplifiers.
Furthermore, the STS11N3LLH5 also has excellent thermal conductivity, making it ideal for applications where temperature stability is a priority. This makes it well suited for high-power applications that generate a lot of heat.
Conclusion
The STS11N3LLH5 is a high-performance single FET designed for large-signal RF applications such as radio transmitters and receivers. It is an enhancement-mode FET, meaning that it requires an applied gate voltage to turn on the device. The device has excellent linearity and gain characteristics, as well as a wide operating frequency range, making it ideal for high-power amplifiers and other RF applications. The device also possesses excellent thermal characteristics, making it suitable for applications that generate a lot of heat. These features make the STS11N3LLH5 a formidable choice for any application requiring an FET.
The specific data is subject to PDF, and the above content is for reference
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