STS10P3LLH6 Discrete Semiconductor Products |
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Allicdata Part #: | 497-15482-2-ND |
Manufacturer Part#: |
STS10P3LLH6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET P-CH 30V 10A 8SOIC |
More Detail: | P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-S... |
DataSheet: | STS10P3LLH6 Datasheet/PDF |
Quantity: | 1000 |
Series: | STripFET™ H6 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.7W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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STS10P3LLH6 application field and working principle
The STS10P3LLH6 is a single high voltage N-channel MOSFET. It is a high-power, low-side switch with low-resistivity and a low on-state resistance. The device feature superior thermal conductivity, high-side current carrying capability, and a low gate-drain capacitance. This device is especially suitable for applications where low on-state resistance and low off-state leakage currents are desired.
The applications of the STS10P3LLH6 are in the domains of audio, video, automotive, and commercial electronic products. It can be used in AC/DC electronic products, power amplifier and subwoofer amplifiers, various personal computers, battery powered automotive audio systems, and many industrial applications. It is also used in battery management systems, DC-DC converters and accelerometers. Additionally, it can be used in applications requiring low voltage, low energy losses and high conversion efficiency.
The device works on the principle of MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. It is a voltage-controlled device, where the input voltage can be used to control the conduction of a current through a channel. The STS10P3LLH6 is a N-channel device, which means that it has a ‘current flow’ from the source to the drain. The terminal named ‘Gate’ is used to control the conduction. When a positive voltage is applied to the gate, the MOSFET is turned ‘ON’ and conduction takes place from source to drain. The opposite is also true; when the gate voltage is grounded, then the MOSFET is turned OFF and no conduction takes place.
The STS10P3LLH6 has a breakdown voltage of 600V, meaning that it will function up to 600V. It is also capable of withstanding high energy stress, making it suitable for applications which require high power operation. Additionally, the device has a low threshold voltage and a low input capacitance making it suitable for high frequency applications. Furthermore, it has an excellent thermal resistance, making it suitable for use in high temperature applications. Lastly, its low on-state resistance ensures low power dissipation and hence, greater power efficiency.
In conclusion, the STS10P3LLH6 is a single high voltage N-channel MOSFET. Its applications include AC/DC, audio/video and automotive electronic products, and also high frequency applications. It features superior thermal conductivity and high-side current carrying capability. Additionally, it is capable of withstanding high energy stress, has a low threshold voltage and input capacitance, and low on-state resistance, making it suitable for even the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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