STS17NH3LL

Series:	STripFET™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	5.7 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 4.5V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	1810pF @ 25V
FET Feature:	--
Power Dissipation (Max):	2.7W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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Introduction:
STS17NH3LL is a single N-channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). It is a commonly used electronic component that is designed to control current in a circuit. MOSFETs are widely used in industrial, automotive and consumer electronics applications, due to their low power consumption and high power density.Background:
A MOSFET is a semiconductor device that consists of two terminals, a drain and a source, and an additional gate terminal between the two. The gate terminal functions as an input and controls the current flow in the circuit. The current flow is produced by the transistor action, in which the electric field generated by the gate voltage modulates the conductivity of the channel between the source and the drain terminals.MOSFETs are classified into two main categories: enhancement-mode and depletion-mode devices. The STS17NH3LL is an enhancement-mode type of MOSFET, which means that it can be turned on or off without the need for an external voltage at the gate terminal. This makes them ideal for use in a variety of applications, such as power regulation, motor control and signal switching.Application Field and Working Principle:
The STS17NH3LL is a N-channel enhancement-mode MOSFET, which means it is capable of controlling the flow of current through a device even without an external voltage. This makes it ideal for automotive, consumer electronics and industrial applications that require high-current and high-power switching.The STS17NH3LL has a drain-source resistance (Rdson) of 0.008 ohms and a gate-drain capacitance (Cgd) of 31pF. This makes it ideal for controlling current through devices both efficiently and quickly. The device has a maximum drain-source voltage (Vds) of 17V and a gate-source voltage (Vgs) of ±25V, making it suitable for high-voltage applications.The STS17NH3LL has an integral reverse-blocking schottky diode which helps protect the device from high-voltage back-flows. It also has a low-on-state resistance, making it useful for applications that require low-power consumption, such as LED lighting and motor control. The STS17NH3LL can be used in a variety of applications, including power switching and current regulation. It can be used to control the speed of a motor, the voltage of a power supply, the intensity of lighting or the speed of a fan. It can also be used to regulate the amount of current in a circuit, as well as in audio applications, such as amplifiers and headphone drivers.Conclusion:
The STS17NH3LL is a single N-channel MOSFET, which is commonly used in automotive, consumer electronics and industrial applications. It is an enhancement-mode type of MOSFET, meaning it can be switched on and off without the need for an external voltage applied to the gate terminal. The device has a low drain-source resistance and a high gate-drain capacitance, making it ideal for applications that require high-current and high-power switching. It is also well-suited for use in audio applications, such as amplifiers and headphone drivers, as well as for controlling the speed of motors and the intensity of lighting.

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