STS1HNK60 Discrete Semiconductor Products

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STS1HNK60

STS1HNK60 is a type of SuperFET-II MOSFET that is available in surface-mount and through-hole packages. This device is a depletion-mode MOSFET that utilizes well-proven trench technology, ideal for a wide range of applications where bipolar transistors would not normally be practical. The device is used alone or as an inverter.

Application Field

The STS1HNK60 is mainly designed for use as a transistor in small Internet of Things (IoT) devices. As such, it is suitable for controlled regulated applications such as DC motor control, timing and power management for digital power conversion, as well as low-power switching. The device can also be used in voltage clamping applications, such as high speed switching for digital communication systems.

The STS1HNK60 is also capable of performing in low performance, high frequency applications such as switching power supplies and DC to DC converters. Thanks to its high current handling capabilities, the device is ideal for high speed operations where high current loads are required such as automotive systems, consumer applications, and LED lighting solutions.

Working Principle

The STS1HNK60 is a depletion-mode MOSFET with a well-proven trench technology. It utilizes a single large-area gate connected to the source region. The gate is situated over the drain and source regions and can provide control of current. The doping profile of the device is such that it produces a “guiding plane” that fully encloses the source region. This in turn allows for good voltage blocking capabilities.

Unlike a purely depletion-mode MOSFET, the STS1HNK60 has a threshold voltage that allows it to be used as an inverter. As such, the threshold voltage is set to a point at which it will start to open and become an active device. The current-voltage characteristics of the device follow the familiar V-I curve for an ideal MOSFET. The device also has a high on-resistance, making it suitable for high speed switching applications.

The STS1HNK60 has a linear current ramp-down response. This ensures smooth current transfer and voltage regulation, allowing it to meet the system requirements for low noise and minimized output voltage ripple. Moreover, the device has a low gate-source capacitance and low gate-drain capacitance, making it suitable for high-frequency switching operations.

Conclusion

The STS1HNK60 is a reliable depletion-mode MOSFET with well-proven trench technology. Its primary application is in small IoT devices, but the device is suitable for a wide range of controlled, regulated applications ranging from DC motor control and timing to power management and low-power switching. The device is capable of high current handling and can provide smooth current transfer and voltage regulation to meet the requirements of high-frequency systems.

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