STS12N3LLH5 Discrete Semiconductor Products

Series:	STripFET™ V
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8nC @ 4.5V
Vgs (Max):	+22V, -20V
Input Capacitance (Ciss) (Max) @ Vds:	1290pF @ 25V
FET Feature:	--
Power Dissipation (Max):	2.7W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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STS12N3LLH5 is a single avalanche-avalanche high-voltage DMOS transistor. It is designed to meet the requirements of industrial, high power electronic applications requiring both very low gate threshold and very high current capability. This device is used in a number of industrial, automotive, and communications applications that require high current capability, as well as low gate threshold.The working principle of the STS12N3LLH5 is based on MOSFET technology, which stands for Metal Oxide Semiconductor Field Effect Transistor. This technology consists of two types of transistors: Metal Oxide Field Effect Transistors (MOSFETs) and Ambipolar Transistors (APT). The STS12N3LLH5 is a MOSFET.MOSFETs are used in a wide variety of applications and are important components in a number of electronic circuits. They are mainly used as switching devices in electronic circuits, but they also have other applications such as amplifiers, logic gates, and voltage regulators.The STS12N3LLH5 is a special type of MOSFET. It has an avalanche-avalanche high voltage DMOS transistor type structure. This type of MOSFET has advantages over standard MOSFETs and APTs. It is superior in many respects, including high current capability, low threshold voltage, and high input impedance. These features makes the device ideal for applications involving high current and high voltage, such as in power supplies, motor control, and power transmissions.The STS12N3LLH5 works by using two terminals, the source and the drain, as two independent switches. The gate terminal is also connected to the source, and the source is used to control the current flow between the source and the drain. When the gate is charged, it causes a thin layer of oxide to form on the surface of the semiconductor material which forms a “barrier” between the source and the drain. This barrier prevents electrons from flowing from the source to the drain, effectively preventing current from flowing. This is how the MOSFET works as a switch.In terms of its application fields, the STS12N3LLH5 can be used in a variety of industries and applications, including power supplies, motor control, and power transmissions. It is also used in automotive applications, as it can be used to regulate the electrical systems in cars. The device is also used for communication applications such as for mobile communication systems, satellite communications systems, and Wi-Fi systems. The device is also used in smart grids and renewable energy applications, where it can be used to regulate the voltage and current levels. Finally, the device can also be used for AC/DC power converters, as well as power controllers, where current and voltage levels need to be regulated.In conclusion, the STS12N3LLH5 is a single avalanche-avalanche high-voltage DMOS transistor. It is designed to meet the needs of industrial, high power electronic applications requiring both very low gate threshold and very high current capability. The device works by using two terminals, the source and the drain, along with the gate terminal to control the current flow. It is ideal for power supplies, motor control, and power transmissions, as well as numerous other applications in the communications and renewable energy industries.

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