STS1NK60Z Discrete Semiconductor Products

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The STS1NK60Z is a single N-channel MOSFET that is often used in power-reliability applications. This MOSFET is a robust, efficient, and reliable power device built on the STMicroelectronics\' PowerMESH™ architecture. The STS1NK60Z is designed to improve power efficiency, to reduce losses, and to deliver rated power over harsh environmental conditions. It is currently used in a variety of applications in power-reliability-focused industries.

Application Field

The STS1NK60Z MOSFET is designed to improve power efficiency, reduce losses, and deliver rated power over harsh environmental conditions. This MOSFET is a versatile device used in a variety of industries including automotive, telecommunications, lighting, computing, and many others. In automotive, it is used in power supply circuits, as well as in engine relay and overload protection. Other applications include power-converter based installations and industrial equipment. For telecommunications, this MOSFET is ideal for powering utility applications, including base stations, pico-cell switching, and wireless switches. In light therapy, this device is used in LED lighting for digital signage and backlighting.

The STS1NK60Z is also used in AC-DC converters, UPS systems, and digital power supplies. It is specifically used in efficient switch-mode power supplies (SMPS), which are used to convert AC power to DC power, to maintain a consistent output voltage, and to drive loads effectively. This device is also used in voltage regulators and charging systems, which are used to monitor and maintain battery voltage in a variety of electronic devices.

Working Principle

The STS1NK60Z is an N-channel MOSFET with a maximum drain current of 60A, a maximum drain-source voltage of 100V, and a fast turn-on and turn-off time. It is designed to increase power efficiency and reduce losses by mitigating power supply security violations. This device features a high-speed DMOS technology that is engineered to provide superior on-state and off-state performance. It has a built-in body diode that minimizes switching loss.

The STS1NK60Z is built with a Si-C hybrid vertical DMOS process that provides superior power handling and reliabilityby combining low-level substrate noise immunity with high voltage and low RDS(on). This device is optimized for low-inductance packages and improved thermal performance. It features ultra-low gate charge and a steep drain-source on-state characteristic.

The STS1NK60Z has a rated total gate charge of 7.2 #Qg, a maximum drain-source on-state resistance of 0.0056 Ohms, a maximum operating temperature of 175 ° C, and a maximum junction temperature of 175°C. It has a maximum thermal intensity of 143 ° C/W and a typical supply current of 30 mA. This device is designed to reduce switching frequency and power consumption, by minimizing time and energy needed for switching.

The STS1NK60Z is also designed with a wide variety of safety and protection features. It is designed with over-temperature and short-circuit protection, as well as with over-voltage detection. This device is designed with a low gate capacitance and excellent avalanche ruggedness, providing quicker turn-on, longer turn-off delays, and better stability in extreme power-supply conditions.

Conclusion

The STS1NK60Z is a single N-channel MOSFET designed to improve power efficiency, reduce losses, and deliver rated power over harsh environmental conditions. This MOSFET is used in a variety of industries for a wide range of applications, including automotive, telecommunications, lighting, computing, AC-DC converters, UPS systems, digital power supplies, and voltage regulators. It features a Si-C hybrid vertical DMOS process and comes with a variety of safety and protection features. The STS1NK60Z’s fast turn-on and turn-off time, high-speed DMOS technology, low-leveled substrate noise immunity, low gate capacitance, and over-voltage detection make it a powerful and reliable tool for power-reliability-focused industries.

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