STS17NF3LL Discrete Semiconductor Products |
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Allicdata Part #: | 497-3224-2-ND |
Manufacturer Part#: |
STS17NF3LL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 17A 8-SOIC |
More Detail: | N-Channel 30V 17A (Tc) 3.2W (Tc) Surface Mount 8-S... |
DataSheet: | STS17NF3LL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | STripFET™ II |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
Vgs (Max): | ±18V |
Input Capacitance (Ciss) (Max) @ Vds: | 2160pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The STS17NF3LL is an n-channel, 30V Power MOSFET manufactured using STMicroelectonics\' most advanced MOSFET technology. It has a maximum drain current of 17A and a maximum continuous drain current of 14A. It has a low on-state resistance and is optimized for very low gate charge and high frequency performance. It is ideal for power management applications such as DC-DC converters, battery chargers, portable electronics and automotive applications.
The STS17NF3LL is a single, enhancement-mode field-effect transistor (FET). It is made up of an Insulated Gate Bipolar Transistor (IGBT), an oxide-semiconductor field-effect transistor (MOSFET), and a rectifying diode. An IGBT is a form of power MOSFET and also has a Schottky diode. The device features an n-channel, double-diffused, embedded-gate design.
The STS17NF3LL is a low-power MOSFET that operates in enhancement mode and can be used in a variety of power management applications. It is designed to ensure fast switching speeds and low on-state power dissipation. The STMicroelectronics STS17NF3LL also offers a low gate threshold voltage (Vth), which is adjustable from -1.6 to -3.5V. This allows the device to be used in a variety of applications such as switching at low gate voltages.
The STS17NF3LL is a fairly simple device in terms of its working principle. When a positive voltage is applied to the gate of the device, the free electrons in the channel are attracted to the gate region, allowing current to flow from the drain to the source. The current flow is proportional to the gate-source voltage (VGS). The drain-source voltage (VDS) also affects the magnitude of the current flow, as a high VDS will cause current leakage. The STS17NF3LL is designed to minimize this leakage, thereby offering improved efficiency.
The STS17NF3LL can be used in a variety of applications and is particularly suitable for use in low-power systems such as battery management, DC-DC converter applications, and LED lighting control. The device is designed to offer high switching speeds, high efficiency, and low on-state power dissipation. The device also provides protection against current surges by offering a high power handling capability.
The STS17NF3LL is an excellent choice for a wide range of power management applications. Its low on-state resistance, fast switching capability, and low gate threshold voltage make it an ideal choice for a variety of applications. The device is also well-suited for switching at low gate voltages and offers protection against current surges.
The specific data is subject to PDF, and the above content is for reference
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