STS11NF30L Allicdata Electronics

STS11NF30L Discrete Semiconductor Products

Allicdata Part #:

497-4121-2-ND

Manufacturer Part#:

STS11NF30L

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 11A 8-SOIC
More Detail: N-Channel 30V 11A (Tc) 2.5W (Tc) Surface Mount 8-S...
DataSheet: STS11NF30L datasheetSTS11NF30L Datasheet/PDF
Quantity: 1000
1 +: $ 0.36000
10 +: $ 0.34920
100 +: $ 0.34200
1000 +: $ 0.33480
10000 +: $ 0.32400
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
Vgs (Max): ±18V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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STS11NF30L is an N-channel MOSFET that belongs to the family of single transistors. It is a passive device that belongs to the Field Effect Transistor (FET) type. This type of transistor is a semiconductor-based device that is mainly used in the electronics industry to perform various switching and amplifying tasks.

The reason STS11NF30L is a popular choice for these tasks is due to its ability to produce higher currents than other types of transistors, hence allowing for the development of more powerful circuits. This makes it very suitable for use in power electronics applications such as for motor control, battery management, and other robotic tasks. Additionally, it is also suitable for use in high-frequency applications as it has a fast switching time.

The working principle of STS11NF30L is based around two important concepts. The first concept is that of Source and Drain. This is the process by which electricity passes through the transistor. The Source is the point where the power supply connects to the transistor, while the Drain is the point where the current is released back into the power source or some other load. In between these two points is a gate which acts as a controlled switch, allowing for precise control of the flow of current.

The second concept is that of Gate-to-Source voltage (Vgs). This is the voltage applied from the gate to the source, used to control the transistor. Based on the Vgs, the transistor will be able to switch on and off, perform linear amplification and voltage control. Two types of transistors can be made based on their Vgs, Enhancement-Mode (Normal-Mode) and Depletion-Mode (Reverse-Mode). This allows for various applications of the STS11NF30L.

Overall, STS11NF30L is an ideal choice for power electronics and high-frequency applications due to its ability to handle high currents. Its two-mode operation makes it suitable for a wide range of applications where precise control of current is necessary. Through careful design, the STS11NF30L can be used to produce reliable and efficient results.

The specific data is subject to PDF, and the above content is for reference

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