STS19N3LLH6 Discrete Semiconductor Products

Series:	DeepGATE™, STripFET™ VI
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	5.6 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 15V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1690pF @ 25V
FET Feature:	--
Power Dissipation (Max):	2.7W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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STS19N3LLH6 Application Field and Working Principle STS19N3LLH6 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) used in a variety of applications. It is a single MOSFET, which means that it consists of a single P-type or N-type channel. This type of transistor is used for switching, amplifying, and controlling the flow of current in the circuit. A MOSFET is a transistor used to control current in electronics. It is made up of two regions of semiconductor material; one that is positively charged and one that is negatively charged. When a voltage is applied to the MOSFET, it changes the conductivity of the positively charged region, allowing or limiting current flow. This type of transistor can be used to switch energy-efficiently and quickly both on and off. STS19N3LLH6 is a low-voltage and low-power MOSFET which is ideal for use in power converters, DC/DC applications, battery-powered applications, and many other low-voltage applications. The MOSFET can handle higher voltages than other MOSFETs with similar size and cost. It also has a low RDS_on value, making it highly efficient. STS19N3LLH6 utilizes a vertical double-diffused MOSFET structure for low on-resistance. This makes it easier to design circuits that require high-speed switching and low power consumption. The device also has a low gate charge and is able to dissipate up to 65 W of power. This makes it ideal for power switching and conversion applications. The structure of the STS19N3LLH6 uses an N-channel silicon substrate and an anode gate region. The anode gate is responsible for controlling current flow through the MOSFET by controlling the electric field between the source and drain. The anode gate voltage controls the current flow through the MOSFET, so that when the anode gate voltage is very high, current flow is blocked. The STS19N3LLH6 uses a high-frequency gate voltage and is capable of operating at very high frequencies, up to 10 MHz. This makes it best suited for signal processing applications such as audio, video, or data communications. The MOSFET also has a high power-to-gate capacitance ratio and is capable of handling large signal currents. The STS19N3LLH6 has a very low power consumption and is able to switch quickly. It is also able to maintain a very low on resistance, making it one of the most efficient MOSFETs available. It also has a robust design and is able to withstand high voltages. In conclusion, the STS19N3LLH6 is a single MOSFET that is used in a variety of applications. It is suitable for low-voltage and low-power applications, as well as high-frequency signal processing applications. It has a low on resistance, high-frequency gate voltage, and high power-to-gate capacitance ratio. It is also able to handle large signal currents and is able to switch quickly. The STS19N3LLH6 is one of the most efficient MOSFETs available and makes it an ideal choice for many applications.

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