STS1DN45K3 Allicdata Electronics
Allicdata Part #:

497-10780-2-ND

Manufacturer Part#:

STS1DN45K3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET 2N-CH 450V 0.5A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 450V 500mA 1.3W Su...
DataSheet: STS1DN45K3 datasheetSTS1DN45K3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SuperMESH3™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Power - Max: 1.3W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: ST*1DN
Description

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STS1DN45K3 Application Field and Working Principle

STS1DN45K3 is a type of semiconductor field-effect transistor (FET) array which is connected in a single package to form a 4-stage amplifier. It is a three terminal device and is mainly used in amplifying and switching applications. The STS1DN45K3 is suitable for use in high voltage applications due to its operation in voltages ranging between 20V and 50V.

STS1DN45K3 belongs to the family of n-channel enhancement-mode devices and consists of four FETs which have common source and common drain connections. The four FETs are connected in two pairs, which are referred to as upper pair and the lower pair and are protected against electrostatic discharge (ESD) by the device\'s built-in protection structure. Each of the pairs contains two FETs and these pairs are connected in parallel at the drain and source nodes such that the upper pair has a higher drain-to-source voltage rating than the lower pair.

Operating Principles

The amplifier current gain (Ai) is determined mainly by the relative transconductance of the two input transistors of STS1DN45K3 which is controlled by the amount of current flowing through them. The gain, generally speaking, increases as the current increases, however, at the same time the output impedance increases as well. Because of this phenomenon, the STS1DN45K3 amplifier is usually limited to applications with relatively low output impedance.

The device also features an adjustable threshold voltage (Vt) which allows the user to fine-tune the current gain of the amplifier and to control the power output. This feature is particularly useful in applications when the user needs to limit the amount of power through the amplifier to prevent distortion. By adjusting the threshold voltage, the user can limit the current flow through the amplifier, thus reducing the power output.

Finally, the STS1DN45K3 is also equipped with a built-in thermal shutdown protection that helps prevent overheating of the device during operation. The thermal shutdown feature can be used in applications where the device is expected to be used for extended periods of time and where the ambient temperature may exceed the rated temperature of the device.

Applications

The STS1DN45K3 is used in a variety of applications including power amplifiers, power switching circuits, motor control applications, power conditioning and many other applications where high voltage and high power are required. It is also used in audio systems and can be used in amplifiers and switching circuits.

The STS1DN45K3 is a versatile device that can be used in a variety of applications where high voltage, high power, and noise immunity are important considerations. Its wide range of features and capabilities make it a popular choice for both professional and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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