Allicdata Part #: | 497-4122-2-ND |
Manufacturer Part#: |
STS12NH3LL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 12A 8-SOIC |
More Detail: | N-Channel 30V 12A (Tc) 2.7W (Tc) Surface Mount 8-S... |
DataSheet: | STS12NH3LL Datasheet/PDF |
Quantity: | 1000 |
Series: | STripFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 965pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.7W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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Transistors - FETs, MOSFETs - Single
The STS12NH3LL is a single N-channel MOSFET that is suitable for high frequency, low power applications and can operate at a very fast switching time.
The device has a maximum drain current of up to 7 A, a drain source voltage of up to 30 V and a breakdown voltage of 12 V. The gate threshold voltage is 3 V and the gate-source voltage is ±20 V. The device is fabricated using a low gate charge, ultra-fast trench MOSFET process, so it has an excellent response time and low power dissipation.
This device is widely used in switching converter applications such as DC/DC converters, DC motor drives, power switches, motor drives and analog circuit applications such as pulse width modulation, servo motor drives, power supplies and over-voltage protection circuits.
Working Principle
The STS12NH3LL MOSFET is controlled by the gate voltage. When the gate voltage is increased, a channel is formed between the drain and the source regions and the drain current begins to increase. As the gate voltage continues to increase, the drain current increases exponentially. When the gate-source voltage drops below the threshold voltage, the channel closes and the drain current decreases exponentially.
When the gate voltage is low, the device will remain in the off-state. When the gate voltage is increased, the on-state will begin and the drain current will increase. A positive gate voltage is required in order for the MOSFET to remain in the on-state.
The gate capacitance of the STS12NH3LL is very low and this means that it requires very low energy to charge the gate and turn the device on. The device also has an ultra-fast switching time so it can be used in high speed applications.
Applications
The STS12NH3LL is an ideal choice for low power, high speed applications such as DC/DC converters, motor drives, pulse width modulation, servo motor drives, power switches, and over-voltage protection circuits. The device can also be used in logic level conversion applications, switch mode power supplies, communication systems, and consumer electronics.
The device can also be used in applications such as buck converters, AC-DC converters, battery chargers, buck-boost converters, and active clamped converters. The device also has an excellent ESD protection and is resistant to electrostatic discharges up to 2 kV.
The specific data is subject to PDF, and the above content is for reference
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