Allicdata Part #: | TSM6963SDCARVGTR-ND |
Manufacturer Part#: |
TSM6963SDCA RVG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET 2 P-CH 20V 4.5A 8TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.5A (Tc) 1.14... |
DataSheet: | TSM6963SDCA RVG Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 5V |
Power - Max: | 1.14W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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TSM6963SDCA RVG is a silicon based transistor array, mostly used for linear and mixed signal applications. It consists of 6 pole pairs with a Vgs range of -4V to +5V. This device works in the form of three structures – depletion stand MOSFET (D-MOSFET), enhancement electron transistors (FET), and vertical PNP transistors. Each of these components have different working principles and application fields.
The depletion stand MOSFET or D-MOSFET, is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It has an internal source and drain region, with a gate on the top to control the flow of current. In this design the source and drain terminals, when given a positive voltage, attracts electrons from the gate and then sweeps away the accumulated positive charge, resulting in the current flow. For a D-MOSFET to operate, the gate has to be biased with a negative voltage. This allows the charge carriers to reach the source/drain and flow of current to begin. D-MOSFETs are widely used in analog circuitry for the amplification of low-frequency signals.
The enhancement electron transistor or FET is an active three-terminal device in which current can be switched from one of its terminals to other two. The transistor uses inversion layer at the gate-channel region to create a strong electrical field to control the current between its source and drain region. The FET devices are usually found in integrated circuits, where they are used to either switch or amplify the signals. FETs are known for their great linearity and fast switching times and are usually the preferred choice for analog applications.
The TSM6963SDCA RVG device consists of a vertical PNP transistor. It is a three-terminal device in which the current flow is regulated by the application of voltage at the Gate-Drain region. The PNP transistor consists of two semiconductor layers, where one layer acts as the “source” and the other layer acts as the “drain”. A low voltage at the Gate-Drain region creates a positive charge that attracts the charge carriers from the source and moves them towards the drain. This action regulates the current flow and the device is used for the amplification of analog signals in applications like data acquisition.
The TSM6963SDCA RVG transistor array is used in a variety of linear and mixed signal applications, such as in analog-to-digital converters (ADCs), analog-to-analog converters (AACs), digital-to-analog converters (DACs) and operational amplifiers (Op-Amps). It is also found in communication circuits, such as receivers, transmitters and low-noise amplifiers (LNAs). The array is used mostly in applications where low noise and high accuracy is required.
The specific data is subject to PDF, and the above content is for reference
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