TSM60N900CI C0G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TSM60N900CI C0G is part of a range of single N-channel power MOSFETs with advanced features and technologies. The TSM60N900CI C0G offers an optimized design for low Rds(on) and a high ruggedness for a given static drain-source on-resistance at a particular temperature, as well as a low gate charge with enhanced body diode ruggedness.

The TSM60N900CI C0G is used for power switching applications, usually as a power switch in a low-side configuration from a DC supply. It can be used for the power distribution of systems with a supply voltage above 10 V, such as PCs, Game consoles, Set-top boxes, mobile phones and other handheld devices.

The TSM60N900CI C0G has a high current rating of up to 60A, which makes it suitable for use in power management applications. It also features a low RDS(On) as well as a low gate charge. The layout of the TSM60N900CI C0G is optimized for low gate charge switching and power loss, making it ideal for high efficiency systems.

The TSM60N900CI C0G offers a wide range of features that allow it to be used in a variety of applications. It features an on-resistive spontaneous body diode, a high-temperature operation, a low-capacitance drain-source reduced capacitance, as well as a low RDS(ON). The TSM60N900CI C0G also has a guaranteed break-down voltage and avalanche capability. This makes it suitable for use in rugged and highly reliable systems.

The working principle of the TSM60N900CI C0G is based on its improved low thermal resistance package. The FET is mounted on a copper leadframe, which helps dissipate heat faster. This copper leadframe provides an excellent thermal resistance, as well as good electrical connections, making the FET suitable for high-current applications.

The FET also features an improved high-frequency low-gate charge dimension, which allows it to be used in high-frequency applications, as well as extremely low input capacitance. The FET also has a low input capacitance, which reduces the input current of the device, making it suitable for low on-resistance and low power losses.

In addition, the FET has an improved drain-to-source on-voltage, making it suitable for use in power management circuits. The improved drain-to-source on-resistance offers a higher current handling and a low gate charge allows for a fast switching speed.

The FET also has a low Vgs for low-cost MOSFETs, and offers a high accessibility of the Drain-source junction. This makes it easier to connect the MOSFET to the load and makes it more secure and reliable. The low Rds(ON) of the FET also helps to reduce power losses during operation, resulting in higher efficiency.

Overall, the TSM60N900CI C0G is an ideal option for applications where a high performance, low power dissipation and high reliability are all required. Its ability to operate at high temperatures, low gate charge and input capacitance make it suitable for use in a wide range of devices and applications.

The specific data is subject to PDF, and the above content is for reference