Allicdata Part #: | TSM60NB190CFC0G-ND |
Manufacturer Part#: |
TSM60NB190CF C0G |
Price: | $ 2.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 600V 18A ITO220S |
More Detail: | N-Channel 600V 18A (Tc) 59.5W (Tc) Through Hole IT... |
DataSheet: | TSM60NB190CF C0G Datasheet/PDF |
Quantity: | 1887 |
1 +: | $ 1.81440 |
10 +: | $ 1.63926 |
100 +: | $ 1.31714 |
500 +: | $ 1.02444 |
1000 +: | $ 0.84883 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | ITO-220S |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 59.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1311pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 3.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TSM60NB190CF C0G is a single N-Channel Mosfet (MOSFET) Transistor suitable for operation up to a maximum temperature of 175°C. This MOSFET is specifically designed for high speed logic level power switching applications for automotive, consumer, networking and computing markets.The TSM60NB190CF C0G is a high performance single N-Channel MOSFET which provides a low on-state resistance (RDS(on)) of 4.1 mΩ at a drain to source voltage of 14 V and a temperature of 25°C. It is built using a proprietary high-voltage SiCR process and the IC package is suitable for surface mount technology for high power efficiency, thermal and junction to ambient thermal de-rating.The TSM60NB190CF C0G is a MOSFET specifically designed to switch power efficiently in high speed logic level power switching applications. It has low gate capacitance and fast switching speed with low on-state resistance, suitable for switching power of up to 10 A. The device also has an integrated ESD protection circuit, providing greater system security.The TSM60NB190CF C0G has a variety of application fields, including Automotive, Consumer, Networking and Computing markets. The device can be used for DC-to-DC converters, motor drive circuits, power supplies, high speed logic level power switching and other small current switching applications.The working principle of the TSM60NB190CF C0G MOSFET involves the use of a gate voltage to control the flow of current through the device. The resistance between the drain and source when the device is ‘on’, is known as RDS(on). The gate voltage controls this resistance and depending on the amount of current passing through the device, the RDS(on) changes. The lower the RDS(on), the higher the performance of the MOSFET in high speed operation.The TSM60NB190CF C0G has an integrated ESD protection circuit for greater system security and reliability. This circuit is designed to be activated by a large voltage transient or pulse, dissipating any excess energy and thereby preventing device damage.In summary, the TSM60NB190CF C0G is a high performance single N-Channel MOSFET suitable for high speed logic level power switching applications for automotive, consumer, networking and computing markets. The device has integrated ESD protection to ensure greater system security, and provides a low RDS(on) of 4.1 mΩ at 14 V and 25°C.
The specific data is subject to PDF, and the above content is for reference
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