Allicdata Part #: | TSM60NB099PWC1G-ND |
Manufacturer Part#: |
TSM60NB099PW C1G |
Price: | $ 5.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 600V 38A TO247 |
More Detail: | N-Channel 600V 38A (Tc) 329W (Tc) Through Hole TO-... |
DataSheet: | TSM60NB099PW C1G Datasheet/PDF |
Quantity: | 1988 |
1 +: | $ 5.07150 |
10 +: | $ 4.56435 |
100 +: | $ 3.75291 |
900 +: | $ 2.90090 |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 329W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2587pF @ 100V |
Vgs (Max): | ±30V |
Series: | -- |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Rds On (Max) @ Id, Vgs: | 99 mOhm @ 11.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The TSM60NB099PW C1G is a three-terminal, specialized single N-Channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). It is a type of field-effect transistor (FET) which utilizes a metal oxide layer as its gate oxide in order to control current flow through a semiconductor material. The TSM60NB099PW C1G is an ideal switch for high-current applications thanks to its low on-state resistance, providing efficient low-voltage switching.
The TSM60NB099PW C1G is designed for a limited number of application fields such as automotive, electrical, and industrial systems. In the automotive industry, it is used for power supply applications, in order to perform large voltage changes in order to eliminate interference from the ignition system or other electronic operating parts. It can also be used for applications such as power tools, motor drives, and motor control systems.
In the industrial field, the TSM60NB099PW C1G can be used for large-scale switching operations such as in AC drive circuits and Robot controllers. The device is also ideal for low-frequency DC motor applications, as well as gun drives.
The TSM60NB099PW C1G is a three-terminal device with an N-Channel MOSFET structure. The source and drain of the device are connected to the two external terminals, while the gate terminal is connected to the oxide layer that is situated between the drain and the source. The gate terminal is used to control the flow of current from the drain to the source.
When a voltage is applied to the gate terminal, the oxide layer becomes conductive and current is allowed to pass from the drain to the source. On the other hand, if the voltage is removed from the gate terminal, the oxide layer becomes non-conductive and current does not flow anymore. This simple action is the basis of the working principle for all types of MOSFETs.
The TSM60NB099PW C1G is specially designed for high-current applications. Its on-state resistance is much lower than regular MOSFETs, allowing it to pass large currents. Additionally, it is protected by a built-in avalanche breakdown feature, making it suitable for use in switched-mode power supplies and other high-voltage applications.
The TSM60NB099PW C1G is an ideal switch for applications which require high-current switching and protection. It is a versatile device, suitable for use in the automotive, electrical, and industrial fields. The device is easy to use and its three-terminal structure makes it ideal for applications such as AC drive circuits, robot controllers, and power tools.
The specific data is subject to PDF, and the above content is for reference
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