TSM60N380CZ C0G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1040pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	20.5nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	380 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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Introduction

The TSM60N380CZ C0G is an N-channel Enhancement-mode Field Effect Transistor with low On Resistance and low gate charge. It is designed to minimize the losses in power distribution systems. The TSM60N380CZ C0G utilizes the latest advanced process technology to optimize the On-Resistance, Gate Charge and switching performance.

Application

The TSM60N380CZ C0G is ideally suited for high and low side switching in power distribution systems. It can be used for a variety of applications including, lighting systems, motor drives, switched mode power supplies, and other automotive, industrial and consumer applications.

Features

The TSM60N380CZ C0G is designed to deliver high efficiency and performance in a variety of applications. It offers low on-resistance, low gate charge, fast switching speeds and excellent thermal performance. Additionally, it features integrated back-to-back diodes and fast body diodes to further reduce switching losses.

Working Principle

A field-effect transistor (FET) is a device that is analogous to a voltage-controlled switch. It consists of a source and a drain, which form the two electrodes of the device, and a gate electrode, which is used to control the amount of current that can flow between the source and drain. In the TSM60N380CZ C0G, when a positive voltage is applied to the gate, the device turns on and a current can flow from the source to the drain. Conversely, when a negative voltage is applied, the device turns off and no current flows. The TSM60N380CZ C0G utilizes a Drain-to-Source voltage to drive the gate of the device. When the drain-to-source voltage is below the gate threshold voltage, the device is in the off state and no current flows. When the drain-to-source voltage is greater than the gate threshold voltage, the device is in the on state and a current will flow from the source to the drain.

Conclusion

The TSM60N380CZ C0G is an Enhancement-mode Field Effect Transistor with low On Resistance and low gate charge. It features low on-resistance, low gate charge, fast switching speeds and excellent thermal performance. Moreover, it is designed to minimize power distribution losses and is ideally suited for high and low side switching in power distribution systems. It utilizes a Drain-to-Source voltage to drive the gate of the device, in order to control the amount of current that can flow between the source and drain.

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