TSM60N600CP ROG

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	743pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	600 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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TSM60N600CP ROG (Revolutionary GaN-on-Si) power MOSFET is a high-performance device designed for use in next-generation power systems, particularly those based on dc-ac inverters in power conversion systems. The device is designed to operate as an enhancement-mode device and utilizes a proprietary integration of GaN-on-Si MOSFET structure for superior switching performance.Overview of DeviceThe TSM60N600CP ROG device is a GaN-on-Si MOSFET technology and integrates analog, digital and power control on a single chip, applying unique technology designs and architectures to create a highly efficient, lightweight and compact switching power device. The TSM60N600CP ROG features the following features:• High switching speed and low ON resistance, resulting in improved power conversion efficiency• Low capacitance gate and drain terminations, providing low gate-drive voltage and overcurrent conditions• Wide-bandgap breakdown voltage capability, high EMI immunity, and excellent high temperature performance• Superior thermal conductivity and fast temperature rise for high-frequency operating conditionsApplication FieldsThe TSM60N600CP ROG provides significant advantages in the areas of power depth and power density, affordability and scalability in high-power applications. These applications include:• Power adapters • High frequency DC/DC converters• Intelligent power modules • Automotive power electronics• Remote charging infrastructure • Enterprise audio video, and medical applications • Uninterruptible power supply• Renewable energy such as solar and wind powerWorking PrincipleThe TSM60N600CP ROG is an enhancement-mode device, which means that it functions by temporarily “clocking” or “energizing” the device. The device is composed of two main components, a gate and a drain. When voltage is applied to the gate, electrons are drawn from the drain to the gate and the electrical resistance is reduced. This effect is known as the channel and is responsible for allowing current to flow from the drain to the gate. The device also contains several other components such as the source, body and substrate. The source is the source of electrons and the substrate is the base for the semiconductor materials. The drain and gate of the device are connected to a circuit, and when current is supplied to the gate, the channel is created by the flow of electrons into the drain and the device conducts electricity. When the current is removed from the gate, the channel is no longer present and the device switches off. ConclusionThe TSM60N600CP ROG device is a revolutionary power MOSFET that combines the robustness of Silicon MOSFET technology with the power density and efficiency of GaN-on-Si technology. This combination makes the device an excellent choice for wide range of high-power dc-ac application from power adapters to renewable energy. The device provides users with high switching speeds, low gate-drive voltage, excellent high temperature performance, and low overcurrent conditions. Its low capacitance gate and drain terminations make it a reliable, versatile, and incredibly efficient solution for a variety of power conversion systems.

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