TSM60N900CP ROG Datasheet/PDFThe TSM60N900CP ROG is a low voltage power MOSFET which is designed for a variety of applications such as high side switching, motor control, and current-mode PWM and current-mode source drivers. It is part of a larger family of MOSFETS which includes several NCVxxxx and TSMxxxxCP ROG devices.
This power MOSFET is composed of two separate sections: the gate and the drain. The gate is composed of P-type and N-type materials. The gate is the control element for the device and it is used to control the flow of current to the drain. The voltage applied to the gate affects the current between the gate and the drain. The voltage applied to the gate can either be positive or negative, which can then control the drain current.
The drain of the TSM60N900CP ROG is composed of N-type material. The drain is what allows the flow of current between the gate and the drain. The amount of current between the gate and the drain is determined by the voltage applied to the gate. A lower voltage gate leads to a lower current flow and vice versa. The majority of the TSM60N900CP ROG devices have a breakdown voltage rating of 120 V.
One of the key features of the TSM60N900CP ROG is its low on-state resistance. This makes it a great choice for high side switching, as it allows for a high current flow. It is also well suited for motor control applications, as it provides excellent response times and switching speed for a variety of loads.
The TSM60N900CP ROG is also well suited for current-mode PWM and current-mode source drivers. It is a very efficient device for driving the power flow in the power conversion circuit. Its low on-state resistance makes it very suitable for high-current applications. Its breakdown voltage rating also ensures that it can work with a wide range of PWM voltages.
The TSM60N900CP ROG is a very versatile device which can be used in a variety of applications. It is especially useful in motor control, high side switching, and current-mode source drivers. Its low on-state resistance and high breakdown voltage make it an ideal choice for driving the power in these types of applications.