Allicdata Part #: | TSM60NB600CHC5G-ND |
Manufacturer Part#: |
TSM60NB600CH C5G |
Price: | $ 1.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 600V 7A TO251 |
More Detail: | N-Channel 600V 7A (Tc) 63W (Tc) Through Hole TO-25... |
DataSheet: | TSM60NB600CH C5G Datasheet/PDF |
Quantity: | 3750 |
1 +: | $ 0.92610 |
10 +: | $ 0.81900 |
100 +: | $ 0.64720 |
500 +: | $ 0.50190 |
1000 +: | $ 0.39623 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 (IPAK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 516pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 2.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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TSM60NB600CH C5G is a powerful logic level MOSFET type of transistor that is suitable for use in many applications, such as switching or amplifying signals. It is a single device, meaning it has only one gate, source and drain connecting it to the external circuit. This type of device is Electrically-Erasable Programmable Read-Only Memory (EEPROM) so it offers flexibility for programming purposes.
This particular transistor is constructed using a trench-gate technology to ensure accurate voltage and current levels across it. It is also made of a highly conductive 54nm silicon material to ensure very low on-resistance. The TSM60NB600CH C5G transistor requires 5.5V to 6V voltage range and a single channel to operate, while it can input up to 10A current.
The most common application of the TSM60NB600CH C5G transistor is in high current power switching. Due to its very low on-resistance and high current capabilities, it is ideal for use in high power switching systems up to 600V. It is also suitable for use in power inverters and H-Bridge configurations for high-side and mid-side applications. This transistor can also be used in DC to DC conversion, for example for stepping up or stepping down voltages.
The basic working principle of this type of transistor is simple. It is normally in an off state when the voltage on its gate is at 0V. When a positive voltage is applied to the gate, it turns on allowing current to flow from the drain to the source. The voltage on the gate determines the amount of current that is allowed to flow between the drain and the source. To turn the MOSFET off, the gate voltage needs to be decreased to 0V, which results in an off state.
In conclusion, the TSM60NB600CH C5G is an excellent choice for high current power switching applications, DC to DC conversion, and for use in H-Bridge configurations. Its low on-resistance and gate voltage range, as well as its 54nm silicon material make the TSM60NB600CH C5G one of the most powerful logica level MOSFET transistors available today. It is easy to use, requires only a low voltage to operate, and is suitable for use in many applications.
The specific data is subject to PDF, and the above content is for reference
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