TSM6N50CH C5G

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The TSM6N50CH C5G is a single N-channel enhancement mode among the Toshiba MOSFET family. It is a reinforced structure vertical DMOS type transistor which features a low on-resistance and withstand voltage, as well as low switching loss thanks to its high speed Switching characteristics.

The TSM6N50CH C5G can be used in the switching application of DC-DC converter, motor drive, and other power management equipments. It also can be used in high voltage, high speed switching applications such as rectifiers, switches and motor drives.

This device has great features for both amplifier and switching applications. It features a low on-resistance and low gate charge, fast switching characteristics, and high breakdown voltage. Additionally, the TSM6N50CH C5G has a high input capacitance which is stable over temperature.

The TSM6N50CH C5G is a three-terminal MOSFET device, which consists of a drain, a source, and a gate terminals. The device operates in the enhancement-mode, it means that the MOSFET can be used as an electronic switch for signals in power applications. The gate terminal can be used to control the flow of current through the channel, meaning it can be used as a digital switch between the drain and the source. When the gate-source voltage is low (“off” state), the drain-source current will not flow. When a positive voltage is applied to the gate-source, the channel gets rendered conductive (“on” or conducting state). This creates a continuous current between the drain and the source and thus can be used to control high currents.

The TSM6N50CH C5G offers a low on-resistance, a low gate charge and high switching speed. This makes the device ideal for motor control applications as it can switch current faster with minimal power losses. The high breakdown voltage of 600V helps to make the device ideal for AC switching applications as it can withstand high voltages and maintain a low-resistance in the on-state to reduce heat dissipation. It is also very capable of switching high frequencies with its low Miller capacitance and Miller effect.

The TSM6N50CH C5G also features a high input capacitance, which increases voltage and current capability, as well as less stress on the gate oxide and lower gate resistance. This makes it ideal for power supply applications as well. The device also has a low thermal resistance, meaning it can dissipate heat better and thus last longer. It also has a high current handling capacity, making it suitable for high power applications. Additionally, it can operate at high temperatures, making it suitable for high temperature applications.

Overall, the TSM6N50CH C5G is an ideal device for a wide range of power management, amplifier and switching application fields. It has a low on-resistance, fast switching speed, high breakdown voltage, high input capacitance and a low thermal resistance, making it ideal for both high power and high frequency applications. It is also capable of operating at high temperatures, making it perfect for power supply applications where higher temperatures are encountered.

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