TSM60NB190CI C0G

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The TSM60NB190CI C0G is a MOSFET transistor designed with an integral source–drain diode. This device has an extended voltage-handling capability, thanks to its high-voltage construction, and it is used in the field of industrial and commercial applications.

This device is usually used as a switch to drive both low- and high-side switches properly, allowing it to control both small signals and large power loads. It is also a suitable choice for low-power control circuits, as it has low input capacitance. The low input capacitance ensures that the signal stays accurately between the voltage thresholds.

This particular MOSFET has a small foot print, or the smallest body size, which makes it one of the best choices for electronic applications that need tighter space and lesser component count. It also has a high breakdown voltage, high current carrying capacity and low total gate charge, which provides superior performance when controlling power. The device’s built-in self-protection feature, ESD-protected drain terminal and N-channel design, give it an extra level of protection from high voltage, overcurrent and electrostatic hazards, making it an ideal choice for motor drives, power supplies, motor drivers, and environment-controlled switching applications.

The TSM60NB190CI C0G transistor works on the basic principle of field-effect transistors (FETs). These transistors, unlike their bipolar counterparts, are voltage-controlled devices that are composed of three layers of semiconductor material. The first layer is the source, also referred to as the bulk, and this is what carries the current. The second layer is the drain, and this is where the current flows. Finally, the third layer is the gate, and this is what controls the flow of current between the source and drain.

The gate of the transistor is connected to a gate electrode, which, when charged, allows electrons to flow from the source to the drain. This flow of current is known as a channel. The size of the channel, or the conductance, is determined by the strength of the electric field applied by the gate electrode, as well as the distance between the source and drain, which is determined by the resistance of the material used between them.

The TSM60NB190CI C0G transistor offers some advantages over other FET devices. Its high-voltage construction allows it to withstand higher voltages than most other FETs, while its low input capacitance preserves signal accuracy. It also offers better noise immunity and safer operation, thanks to the N-channel design and its ESD-protected drain terminal. Finally, its small foot print makes it ideal for applications where space and a low component count is of utmost importance.

The TSM60NB190CI C0G transistor is a perfect choice for industrial and commercial applications that need reliable and stable performance. Its high-voltage construction, excellent noise immunity and built-in self-protection make it an ideal choice for motor drives, power supplies, motor drivers and environment-controlled switching applications. And its smaller footprint makes it well suited for space-limited applications and those where a low component count is preferred.

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