| Allicdata Part #: | TSM680P06CHX0G-ND |
| Manufacturer Part#: |
TSM680P06CH X0G |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET P-CHANNEL 60V 18A TO251 |
| More Detail: | P-Channel 60V 18A (Tc) 20W (Tc) Through Hole TO-25... |
| DataSheet: | TSM680P06CH X0G Datasheet/PDF |
| Quantity: | 1449 |
| 1 +: | $ 0.43470 |
| 10 +: | $ 0.36540 |
| 100 +: | $ 0.27386 |
| 500 +: | $ 0.20083 |
| 1000 +: | $ 0.15519 |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Supplier Device Package: | TO-251 (IPAK) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 20W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 16.4nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 68 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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TSM680P06CH X0G is a high current, high speed, non-polarized, single-gate, depletion mode, thin-film transistor (TFT) developed by Toshiba Electronic Materials Co. Ltd. It is mainly used in active matrix LCD displays, such as those found in laptops and tablet computers. The device has a wide range of applications, including LCD backlighting control, dimming, power conversion, and power management.
The TSM680P06CH X0G features an n-channel TFT with a drain-to-source breakdown voltage of 30V, a total gate-to-source capacitance of 0.2pF, and an output current rating of 16A. It also has a threshold voltage of 0.3V, a maximum on-resistance of 0.85Ohms, and an on/off ratio of 10. This device is available in a space-saving, 6-pin TO-66 package for easy mounting and provides a low insertion loss.
The working principle of the TSM680P06CH X0G is based on the depletion of charge carriers from the channel region when the gate voltage is less than the threshold voltage. In the depletion region, the device acts as an open switch and allows no current to flow from the drain to the source. When the gate voltage is greater than the threshold voltage, electrons from the gate region fill the depleted channel and the device acts as a closed switch. This, in turn, allows current to flow from the drain to the source.
In addition to its applications in active matrix LCD displays, the TSM680P06CH X0G can also be used in a number of other applications, such as in DC/DC converters, switching power control systems, high-side switches, and lighting circuits. It is a highly reliable and durable device that provides excellent performance and is widely used in the electronics industry.
In summary, TSM680P06CH X0G is a high current, high speed, non-polarized, single-gate, depletion mode, thin-film transistor. The working principle of this device is based on the depletion of charge carriers from the channel region when the gate voltage is less than the threshold voltage, which allows current to flow from the drain to the source when the gate voltage is greater than the threshold voltage. It is mainly used in active matrix LCD displays, as well as in a number of other applications, and is a highly reliable and durable device that provides excellent performance.
The specific data is subject to PDF, and the above content is for reference
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TSM680P06CH X0G Datasheet/PDF