| Allicdata Part #: | TSM60N1R4CHC5G-ND |
| Manufacturer Part#: |
TSM60N1R4CH C5G |
| Price: | $ 0.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CH 600V 3.3A TO251 |
| More Detail: | N-Channel 600V 3.3A (Tc) 38W (Tc) Through Hole TO-... |
| DataSheet: | TSM60N1R4CH C5G Datasheet/PDF |
| Quantity: | 1000 |
| 15000 +: | $ 0.27821 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TO-251 (IPAK) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 38W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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The TSM60N1R4CH C5G is a type of field effect transistor (FET). FETs are active electronic components that can be used to control the flow of electricity through a circuit. Unlike other types of transistors, such as bipolar junction transistors, FETs have no gate current and do not require an external base voltage to operate. They have an extremely low input impedance and can easily switch from one state to another, making them ideal for use in high speed, low power applications.
The TSM60N1R4CH C5G is a single semiconductor component that uses two transistors in a self-propelled package with high-voltage resistance to operate. It has an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor), and an insulated gate bipolar transistor. The N-channel MOSFET has a lower on-impedance and a higher current capability than many other types of transistors, making it suitable for switching applications. The insulated gate bipolar transistor provides further current and voltage control in the circuit.
The TSM60N1R4CH C5G is typically used in high-voltage, low-current applications. It is particularly useful for power supplies, motor control, and other high-power applications. In these applications, the TSM60N1R4CH C5G can control current, reduce power consumption, and switch between different states quickly.
The working principle behind the TSM60N1R4CH C5G is fairly simple. The device consists of two transistors, one connected to the gate contact, and the other to the drain contact. When a voltage is applied to the gate contact, it creates an electric field that shifts the electron density in the MOSFET, allowing it to conduct current. The insulated gate bipolar transistor allows for further control of the current by pushing the voltage up or down, depending on the application.
The TSM60N1R4CH C5G is a specialized type of transistor that has a wide range of applications in various industries. In addition to its high voltage and low current applications, it is used for audio amplifiers, digital signal processing, operational amplifiers, high-speed switching, and more. It is also an excellent choice for applications that require fast switching speeds, low power consumption, and high-voltage withstand.
The specific data is subject to PDF, and the above content is for reference
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TSM60N1R4CH C5G Datasheet/PDF