TSM60N600CH C5G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TO-251 (IPAK)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	743pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	600 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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。<p>A MOSFET is a type of transistor that relies on electronic charge carriers due to the structure of its MOS (metal-oxide-semiconductor) gate. The TSM60N600CH C5G is a single-n-channel, power MOSFET intended for high power switching applications. This particular MOSFET can deliver a maximum drain current of 60A under a wide range of load conditions. It also features an 8V gate-source voltage rating and an RDS(on) of 0.009Ω. The device is protected by an internal gate-source ESD clamp, helping extend its lifespan and reliability.</p><p>The TSM60N600CH C5G MOSFET can be used in a variety of applications, such as brushless DC and stepper motor drives, AC and DC motor drives, HVAC, welding and charging applications. It is also ideal for automotive and industrial applications requiring a high power switching MOSFET.</p><p>The working principle behind the TSM60N600CH C5G is straightforward. When the gate-source voltage (VGS) is higher than the threshold voltage (VTH) and the drain-source voltage (VDS) is greater than VGS, the MOSFET will allow a certain amount of current to flow through the drain and the source. The amount of current that can flow through is determined by the size of the channel in the MOSFET. The larger the channel, the more current that can flow without overheating.</p><p>To control the amount of current that flows through the TSM60N600CH C5G, an external circuit must be used to adjust the gate-source voltage as needed. This can be accomplished by a PWM signal, a digital control signal, or a variable voltage signal. With the proper control circuit, the TSM60N600CH C5G can be used to drive a wide range of loads at varying power levels.</p><p>In conclusion, the TSM60N600CH C5G is a single-n-channel, power MOSFET designed for high power switching applications. It is capable of delivering a maximum drain current of 60A and features an 8V gate-source voltage rating. The device is well-suited for brushless DC and stepper motor drives, HVAC, and industrial applications, and can be controlled using an external circuit to adjust the gate-source voltage.</p>

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