Allicdata Part #: | TSM60N380CIC0G-ND |
Manufacturer Part#: |
TSM60N380CI C0G |
Price: | $ 1.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 600V 11A ITO220 |
More Detail: | N-Channel 600V 11A (Tc) 125W (Tc) Through Hole ITO... |
DataSheet: | TSM60N380CI C0G Datasheet/PDF |
Quantity: | 985 |
1 +: | $ 1.70730 |
10 +: | $ 1.54161 |
100 +: | $ 1.23890 |
500 +: | $ 0.96359 |
1000 +: | $ 0.79840 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1040pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The TSM60N380CI C0G is a general-purpose single-channel, MOSFET transistor with a maximum drain source voltage of 600 V, drain current at 25°C and a gate threshold voltage of -6.2 V. It is commonly used for applications such as motor drives, power supplies, and power conditioning.
The TSM60N380CI C0G has several distinct attributes which make it suitable for various applications. Firstly, the device has an exceptionally low maximum ON-resistance of 53 milliohms, which offers greater efficiency and performance reliability in a wide range of conditions. Secondly, the TSM60N380CI provides fast switching speeds and exceptional thermal stability, making it ideal for applications requiring high levels of accuracy and reliability.
The principle of operation of the TSM60N380CI C0G is basic n-channel MOSFET transistor operation. The transistor is designed with a Gate, a Drain and a Source. Electrical current is controlled by the voltage applied to the Gate terminal, which then pulls current through the Drain and Source terminals.To turn the transistor “ON”, a positive voltage must be applied to the Gate in order to create an additional electric field, which will allow more electrons to flow through the Drain and Source terminals. This will increase the flow of current and turn the transistor “ON”. To turn the transistor “OFF”, the voltage applied to the Gate should be zero or negative, which will reduce the electric field and prevent electrons from flowing through the Drain and Source terminals. This will reduce the current flow and turn the transistor “OFF”.
The TSM60N380CI C0G is well-suited for applications such as motor drives, power supplies, and power conditioning. Its low maximum ON-resistance and fast switching speeds offer greater efficiency and performance reliability. Additionally, its exceptional thermal stability makes it ideal for precision-demanding applications. Overall, the TSM60N380CI C0G is a great choice for a wide range of applications that require high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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