Allicdata Part #: | TSM60NB380CFC0G-ND |
Manufacturer Part#: |
TSM60NB380CF C0G |
Price: | $ 1.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 600V 11A ITO220S |
More Detail: | N-Channel 600V 11A (Tc) 62.5W (Tc) Through Hole IT... |
DataSheet: | TSM60NB380CF C0G Datasheet/PDF |
Quantity: | 990 |
1 +: | $ 1.23480 |
10 +: | $ 1.11573 |
100 +: | $ 0.89655 |
500 +: | $ 0.69733 |
1000 +: | $ 0.57779 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | ITO-220S |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 810pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 2.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TSM60NB380CF C0G is a high-performance, high-voltage, level-shift MOSFET, manufactured using an advanced trench technology that offers improved breakdown voltage, low on-resistance and fast switching capability. It is ideal for applications such as motor drivers, dc-dc converters, power amplifiers and other power-management applications. This MOSFET is available in three different packages, namely TO220F, DPAK and D2PAK.
The TSM60NB380CF C0G MOSFET is manufactured using an advanced trench technology which enables it to have superior breakdown voltage and low on-resistance. The breakdown voltage is typically 839 V, with a drain-source on-resistance of only 780 mΩ. The device is designed in such a way that it can handle voltages up to 1000 V and delivers superior switching performance with a typical turn-off time of 4.4 ns. It is capable of handling power levels of up to 80 W, making it ideal for high-power applications.
The working principle of the TSM60NB380CF C0G is based on the field effect phenomenon. This involves an electric field created between two metal plates across which charge can flow. When a MOSFET is used, a small voltage is applied to the gate of the device which results in a larger voltage at the drain-source. This larger voltage forms the electric field, allowing electrons to move through the channel and be used for various purposes.
The TSM60NB380CF C0G is typically used in motor drivers, dc-dc converters and power amplifiers, due to its high-performance, high-voltage capabilities. It is also used in other power-management applications, such as in automotive and industrial systems, where its superior switching performance, low on-resistance and high breakdown voltage make it an ideal choice. It can also be used in battery chargers, wireless transmitters and other high-power applications.
The TSM60NB380CF C0G is a high-performance, high-voltage MOSFET that is ideal for applications where high levels of power and high-voltage operation is required. Its advanced trench technology offers improved breakdown voltage, low on-resistance and fast switching capability, making it ideal for a range of power management applications from motor drivers to dc-dc converters.
The specific data is subject to PDF, and the above content is for reference
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