Allicdata Part #: | TSM6968SDCARVGTR-ND |
Manufacturer Part#: |
TSM6968SDCA RVG |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET 2 N-CH 20V 6.5A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 6.5A (Ta) 1.04... |
DataSheet: | TSM6968SDCA RVG Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.18479 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 10V |
Power - Max: | 1.04W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The TSM 6968SDCA-RVG is a 6x6 array of thin-film silicon self-aligned MOSFETs, which have been developed for use in high-performance power management devices. This array of Field-Effect Transistors (FETs) is designed for minimum turn-on voltage and extremely low gate leakage current. In addition, the array is exceptionally well-suited to switching applications requiring low on-resistance and very low off-state leakage.
MOSFETs, or Metal Oxide Semiconductor Field-Effect Transistors, are solid-state electronic devices used to amplify or switch electronic signals. MOSFETs are designed using a thin film of semiconductor material and are part of the III-V family of solid-state devices; these include transistors and diodes. The TSM 6968SDCA-RVG is an array of thin-film self-aligned MOSFETs.
The TSM 6968SDCA-RVG is designed to provide a low on-resistance and low power consumption. It is a 6x6 array of thin-film silicon self-aligned MOSFETs and can be used in a variety of high-performance power management applications. It provides a low on-resistance and low gate leakage current, making it an ideal choice for switching applications requiring low power consumption and excellent on-state conductance.
The working principle of the TSM 6968SDCA-RVG array of MOSFETs is quite simple. Each MOSFET in the array consists of three basic components; the gate, the source, and the drain. The gate is the controlling element that is responsible for turning the transistor on or off. Applying a voltage to the gate will cause the transistor to turn on, allowing current to flow from the source to the drain. The source is the area where the current enters the device, and the drain is the area where the current exits the device.
The on-state resistance of the TSM 6968SDCA-RVG array of MOSFETs can be controlled by the gate voltage. Lowering the gate voltage will reduce the on-state resistance of the MOSFETs, while increasing the gate voltage will increase the on-state resistance. The on-state resistance of the array can be further reduced by lowering the temperature, as lower temperatures reduce the leakage current in the devices.
The TSM 6968SDCA-RVG array of MOSFETs is well-suited for use in a wide variety of power management applications, including DC-to-DC converters, motor control, and power management systems. The array can be used in switching applications requiring low on-resistance and low off-state leakage, and the MOSFETs are designed to withstand both high temperature and switching loads.
Overall, the TSM 6968SDCA-RVG is an excellent array of MOSFETs for use in high-performance power management applications. The low on-resistance and low power consumption make it an ideal choice for switching applications requiring low power consumption and excellent on-state conductance. Combined with its excellent thermal stability, the TSM 6968SDCA-RVG array of MOSFETs is an ideal solution for a wide variety of switching and power management systems.
The specific data is subject to PDF, and the above content is for reference
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