UNR311100L Allicdata Electronics

UNR311100L Discrete Semiconductor Products

Allicdata Part #:

UNR311100LTR-ND

Manufacturer Part#:

UNR311100L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR311100L datasheetUNR311100L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1
Description

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The UNR311100L is a type of single, pre-biased, bipolar junction transistor or BJT, specifically a n-p-n type. This device is specifically a low-voltage, general-purpose transistor, primarily used as a digital switch. The transistor is made from a semiconductor material and is typically used in digital logic and switching devices. The device is also commonly used in amplifier, mixer and other non-switching applications.

The UNR311100L basic function is to electronically regulate current, switching it off and on in response to the control voltage applied to the base. The device is constructed with two p-type and one n-type semiconductor material, with the two p-type materials forming the emitter and collector and the n-type material forming the base. The base is biased with an external resistor to enable the device to perform. This is known as pre-biased bipolar junction transistor as it requires an external bias current before it can function.

In operation, the current gain of the UNR311100L is initially determined by the size of the forward voltage applied to the base terminal or the control voltage. This voltage is what triggers the device to start conducting because the base and emitter leads are forward bias. When the current gain is at its maximum, the device is then said to be saturated. In this condition, the current flow between the device’s emitter and the collector will be at its maximum.

A key feature of the UNR311100L is the fact that is it a pre-biased device. This means it needs a resistor in series with the control input to enable it to function. This resistor serves to bias the base, or control input, so that a signal or voltage can be applied to the device. This signal will cause a change in current, as the voltage applied to the control input adjusts the device’s current gain. This makes the UNR311100L an ideal choice for digital switching applications as it is capable of switching very quickly in response to changes in the applied control voltage.

The UNR311100L is also suitable for use in amplifier, mixer and non-switching applications. It can be used to control the input signal strength, or act as a filter, in these applications. The device’s current gain can be adjusted in these applications as well, depending on the signal strength. This makes the device a great choice for audio and other signal processing applications.

The UNR311100L is an extremely versatile device. Its ability to function in digital switching, amplifier and non-switching applications make it a great choice for a wide range of applications. It is also easy to use, making it a great choice for even novice engineers or hobbyists. As such, the UNR311100L is a popular choice for many professional and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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