UNR31A4G0L Allicdata Electronics

UNR31A4G0L Discrete Semiconductor Products

Allicdata Part #:

UNR31A4G0LTR-ND

Manufacturer Part#:

UNR31A4G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR31A4G0L datasheetUNR31A4G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1
Description

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UNR31A4G0L Application Field and Working Principle

UNR31A4G0L is a single, pre-biased bipolar junction transistor (BJT) designed for use in industrial applications. It is designed for use in a wide range of applications, including power management, signal processing, and AC-DC conversion. The transistor can also be used for DC/DC switching and AC/DC switching for both unipolar and bipolar applications.

The device is capable of handling a wide range of current and voltage ranges, with the maximum voltage being 56V and the maximum current being 10A. It is available in both conventional and surface mount packages and can be used in various applications, depending on its size and configuration. The device also has many features, including high gain, high power handling, and low propagation delay.

The working principle of the UNR31A4G0L can be broken down into four steps. First, a base current is applied to the collector-emitter junction. This causes the base-emitter junction to become forward bias, resulting in a small current flow through the collector-emitter junction. The current flow through the collector-emitter junction then causes a voltage drop across it, causing an increase in the collector-emitter voltage.

The second step is the switching of the device on. This is done by applying a larger base current to the transistor, causing a large current to flow through the collector-emitter junction. This in turn causes a larger voltage across the collector-emitter junction, and causes the collector-emitter voltage to start to increase. This increases the current through the collector-emitter junction and causes the device to turn on and become saturated.

The third step is the switching of the device off. This is done by reducing the base current, causing a decrease in the collector-emitter voltage. This causes the device to shut off and become cut off. Finally, the fourth step is to reset the device, which is done by reapplying the base current, causing the device to turn back on, again.

The UNR31A4G0L is an ideal choice for a wide range of applications. It is designed for use in power management, signal processing and AC-DC conversion, and is also suitable for DC/DC switching and AC/DC switching for both unipolar and bipolar applications. The device has a wide range of current and voltage ranges, and its features include high gain, high power handling, and low propagation delay.

The specific data is subject to PDF, and the above content is for reference

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