UNR32A000L Allicdata Electronics

UNR32A000L Discrete Semiconductor Products

Allicdata Part #:

UNR32A000LTR-ND

Manufacturer Part#:

UNR32A000L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR32A000L datasheetUNR32A000L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1
Description

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The UNR32A000L is a complementary, PNP-NPN, pre-biased, dual-channel semiconductor switch. It is typically used as a low-power switch for applications ranging from power supplies to video buffering. The technology and principles behind this device are part of the family of pre-biased transistors, more specifically bipolar junction transistors (BJTs).

At the heart of the UNR32A000L is a single PNP transistor and a single NPN transistor. These two components are called the base and collector, respectively, and form the basic "on-off" circuit in the device. When a voltage is applied across the PNP transistor, it creates a charge that flows through the remainder of the circuit. In order for the device to be "on", both the voltage and current must meet the required thresholds before the transistors become conductive.

The current transferred between the two transistors is directly proportional to the applied voltage. As the current increases, the base becomes increasingly sensitive to voltage changes, until the point where one or both of the transistors becomes too weak to maintain full conduction. At this point, the device is said to be "off".

In order to create a pre-biased switch, the current and voltage necessary to maintain conduction is already supplied to the device. This eliminates the need for external components and allows the device to switch with a lower supply voltage. The pre-biased switch can be used in circuits that require a high degree of switching speed, as well as in applications that require a low operating temperature.

The UNR32A000L is also resistant to damage from external sources, such as high-powered spikes of electricity. This allows for use in applications such as electric vehicle charging circuits and industrial gate control systems. The device is also designed to operate over a wide range of temperatures, making it suitable for use in cold storage systems, or other applications requiring reliable performance in extreme conditions.

Overall, the UNR32A000L is a versatile and reliable pre-biased switch for low-power applications. Its use of a single PNP and NPN transistor permits a high degree of repeatability and accuracy, while its pre-biased nature allows for easy and efficient switching. As a result, the UNR32A000L is an ideal choice for a wide range of applications that require low-power switching, especially in applications that require high levels of reliability and accuracy.

The specific data is subject to PDF, and the above content is for reference

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