UNR32A500L Discrete Semiconductor Products |
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Allicdata Part #: | UNR32A500LTR-ND |
Manufacturer Part#: |
UNR32A500L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 100MW SSSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR32A500L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Specifications
Resistor - Base (R1): | 10 kOhms |
Supplier Device Package: | SSSMini3-F1 |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 100mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 80mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
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UNR32A500L Application Field and Working Principle
UNR32A500L is a type of single, pre-biased bipolar junction transistor (BJT) that is often used in a variety of electronic devices. Its primary application field covers components for reliability, such as motor control, power supplies, and avionics. UNR32A500L transistors offer excellent thermal properties, which aid in providing reliable and stable operation in various conditions. They also have a wide frequency range and are able to withstand higher voltages and power ratings. Additionally, they have low noise characteristics due to their lower output noise current, which makes them highly suitable for use in high-end applications. The working principle of UNR32A500L is based on the principles of electron tunneling and transistor bias. The device utilizes an n-type material and places the source contacts in direct contact with the substrate. The high-order doping in the base junction enables high-speed saturation characteristics with a low collector-emitter voltage. The UNR32A500L also has an additional edge over other devices because of its pre-biased feature. This feature allows the device to reach higher operational speeds than other transistors. Furthermore, its output current is more stable in environmental conditions, making it more reliable for electronic devices.Moreover, the UNR32A500L helps reduce parasitics and improves noise immunity due to its low output voltage ratings and higher input impedance. Additionally, the device’s low-impedance characteristic helps resist electromagnetic interference (EMI). Moreover, UNR32A500L is efficient in controlling its current flow, thanks to its straightforward and reliable operation. Since the device operates at low power levels, it also helps save energy. Due to its wide applications, UNR32A500L transistors are used in a variety of electronic devices in the automotive, industrial, and consumer markets. The UNR32A500L has proven itself to be a reliable device across a variety of industries. This is due to its wide frequency range, high-current ratings, low noise characteristics, and pre-biased feature. Furthermore, its low-power operation, improved noise immunity, and control of current flow make it a great choice for many applications. All in all, UNR32A500L transistors can be used in a variety of applications due to their high-performance features, such as reliable and fast operation, wide frequency range, low noise characteristics, and pre-biased feature. Additionally, the device is also efficient in its energy usage, thanks to its low power level. Lastly, its improved noise immunity and control of current make it a great choice for many applications.The specific data is subject to PDF, and the above content is for reference
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