UNR321000L Allicdata Electronics

UNR321000L Discrete Semiconductor Products

Allicdata Part #:

UNR321000LTR-ND

Manufacturer Part#:

UNR321000L

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR321000L datasheetUNR321000L Datasheet/PDF
Quantity: 10000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
10000 +: $ 0.06049
Stock 10000Can Ship Immediately
$ 0.07
Specifications
Resistor - Base (R1): 47 kOhms
Supplier Device Package: SSSMini3-F1
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Series: --
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The UNR3210L is a single pre-biased bipolar junction transistor (BJT) that has a broad range of applications such as DC/DC converters, operational amplifiers and comparators.

The UNR3210L is constructed from NPN compound materials and utilizes a single pre-biased collector-emitter junction. This junction has a current gain characteristic that varies with collector current and can be used to increase or decrease the current flow in a circuit. The substrate of the UNR3210L is made from silicon and it has a breakdown voltage of 35V and a collector-emitter voltage of 20V.

The pre-biased junction of the UNR3210L allows it to be used in circuits with high input impedance, low output impedance and low noise. This makes it ideal for use in applications where low noise and high speed switching is required. Additionally, the UNR3210L has good breakover and turn-off characteristics, making it suitable for DC and AC switching.

In terms of its working principle, the UNR3210L operates by allowing current to flow through its pre-biased collector-emitter junction when a signal is applied to its base. This causes an increase in current at the collector, which is fed back to the base and decreases the current at the collector to a low level. This cycle continues until the applied signal is removed, resulting in the current returning to its original state.

The UNR3210L is a versatile device that can be used in a variety of applications in a number of different industries. It can be used in signal conditioning and power switching circuits, in amplifier and comparator designs, and in DC/DC converters. It also has a low thermal resistance, meaning that it is suitable for use in high-power applications as well as in low-power designs. It is also an ideal choice for automotive, consumer, and industrial applications.

In conclusion, the UNR3210L is a single pre-biased BJT that has a broad range of applications, including signal conditioning, power switching, amplifier and comparator designs, and DC/DC converters. Its pre-biased junction allows it to be used in high-impedance circuits and it has a good breakover and turn-off characteristics, making it suitable for DC and AC switching. It can be used in a variety of applications and its low thermal resistance makes it perfect for use in high-power and low-power designs.

The specific data is subject to PDF, and the above content is for reference

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