UNR32A6G0L Allicdata Electronics

UNR32A6G0L Discrete Semiconductor Products

Allicdata Part #:

UNR32A6G0LTR-ND

Manufacturer Part#:

UNR32A6G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR32A6G0L datasheetUNR32A6G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1
Description

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The UNR32A6G0L bipolar junction transistor (BJT) is a single pre-biased transistor. It is a three-terminal device that features a small size and low cost, making it an ideal choice for use in a variety of applications. The UNR32A6G0L has a maximum collector-emitter breakdown voltage of 30A which makes it suitable for use in a wide range of voltage applications from 3.2V to 28V. It is also designed to be able to handle very high levels of current, up to 16A, making it ideal for use in high power applications.

The UNR32A6G0L is useful for a variety of applications such as power supplies, switching circuits, and motor control. It is an ideal choice for applications that require fast switching speed, high accuracy, and strong durability. For example, it can be used in power-supplies for applications requiring high programmable voltage and current regulation, as well as high switching speed. The transistor’s fast switching speed helps to keep the circuit stable, while its high accuracy ensures accurate timing. The transistor can also be used in a range of motor control circuits, as its small size and low cost make it suitable for use in small, fast-changing motors.

The UNR32A6G0L transistor is a NPN type of bipolar junction transistor, and its operation relies on two currents: a net current that carries minority carriers from the collector to the emitter and a base current that carries majority carriers from the base to the emitter. When the transistor is turned on, the base-emitter junction becomes forward biased and creates a strong electric field across the base-emitter junction. This, in turn, allows electrons to flow freely from the base to the emitter and create a hole in the collector region, allowing current to flow from the collector to the emitter. As current starts to flow through the transistor, a negative voltage (VBE) appears at the base terminal of the transistor. As the base current increases, the collector current (IC) increases exponentially. The negative voltage at the base terminal allows the transistor to turn on quickly and efficiently.

The UNR32A6G0L transistor is a great choice for applications requiring fast switching, accurate timing, and high durability. Its fast switching speed, small size, and cost-effectiveness make it a popular choice for a variety of applications, from power supplies to motor control. Its low cost and small size also make it a great choice for use in miniature devices. The transistor’s operation relies on two currents, a net current and a base current, and its performance is dependent on the voltage at the base terminal. All of these features make the UNR32A6G0L the ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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