UNR32A4G0L Allicdata Electronics

UNR32A4G0L Discrete Semiconductor Products

Allicdata Part #:

UNR32A4G0LTR-ND

Manufacturer Part#:

UNR32A4G0L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR32A4G0L datasheetUNR32A4G0L Datasheet/PDF
Quantity: 10000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
10000 +: $ 0.04748
Stock 10000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: SSSMini3-F1
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 80mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The UNR32A4G0L is a single, pre-biased bipolar junction transistor (BJT). It is designed to operate in a wide range of applications, including television sets, audio amplifiers, and medical imaging. It is able to handle high voltages and currents, and is capable of operating at frequencies up to 60 MHz. The major components of the UNR32A4G0L include a base, collector, and emitter. Its structure is based on a three-layer silicon wafer, with the layers being: the substrate, the base, and the collector.

The working principle of a BJT is based on the transport of negatively charged electrons from the emitter to the collector. The electrons travel through the base of the transistor, and the size of this current is regulated by the voltage at the base electrode, which is known as the base-emitter voltage. In the case of the UNR32A4G0L, this voltage is typically between 0.6 and 1.6 V. When the base-emitter voltage is high, the transistor is in the so-called "on" state. This causes a current to flow from the emitter to the collector, which can cause a voltage or current to appear at the collector depending on the application.

A typical application for the UNR32A4G0L can be found in the field of medical imaging. It is used to provide the current required to activate an image intensifier. In this case, an electrical signal is applied to the transistor\'s base, which causes it to output a current that is proportional to the size of the signal applied. The current then flows through the image intensifier, which amplifies the signal and produces a visible light output. This light output is used to form the image on a camera.

Another example of a UNR32A4G0L application can be found in television sets. In this case, it is used to amplify the signal from the television tuner and drive the voltage at the speaker output. The UNR32A4G0L transistor can also be used as a switch in sound systems, power amplifiers, and motor control circuits. It is also used as a switch in circuits where extreme currents and voltages are required.

The UNR32A4G0L transistor is a versatile device and is used in a wide range of applications. Its ability to handle high currents and voltages, as well as its compatibility with a variety of circuit components, makes it a popular choice for many different applications. Its basic structure is simple and easy to understand, and it can be used to create a variety of circuits with desirable features.

The specific data is subject to PDF, and the above content is for reference

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