UNR31A0G0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	80mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	80MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	SSSMini3-F1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - Single, Pre-Biased

The UNR31A0G0L is a type of single, pre-biased bipolar junction transistor (BJT) that is developed by Rohm Semiconductor. The UNR31A0G0L is a practical, convenient, and cost-effective electronic component that is designed for monostable and astable circuit applications. The UNR31A0G0L is made up of two diode-connected transistors. The transistors are mounted on a single substrate and are connected in such a way that they are equally pre-biased.The UNR31A0G0L has a base-emitter voltage of 30V, making it the perfect option for high-voltage applications. Its maximum collector current is 2A, and its maximum collector-emitter voltage is 25V. Its maximum power dissipation is 1W.The UNR31A0G0L is an attractive choice for many circuit designs due to its simple yet effective working principle. The working principle of the UNR31A0G0L is based on the fact that its two transistors are pre-biased and thus, while the base-emitter voltage is applied, the collector-emitter voltage follows. That is, the collector-emitter voltage is proportional to the base-emitter voltage.By applying the right level of voltage to the base-emitter, the collector-emitter voltage of the UNR31A0G0L can be varied, allowing the circuit designer to regulate the flow of current through the device. This is the simplest explanation of the working principle of the UNR31A0G0L.The UNR31A0G0L is commonly used in RF, audio, power, and signal amplifier applications because of its high operating voltage and low power dissipation. It is also used in logic devices for switching, such as logic gates, multiplexers, and flip-flops.The UNR31A0G0L is a cost-effective device that is typically available in TO-220-packaged formats. This ensures its robustness and strong performance over long periods. The UNR31A0G0L is also fairly easy to use and maintain compared to other similar devices.The UNR31A0G0L is a dependable and reliable device that is suitable for many high-voltage applications. It is an easy-to-use device that offers its users excellent performance. The UNR31A0G0L is a cost-effective solution for many circuit designs, making it an attractive choice for circuit designers and users alike.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description