UNR311200L Discrete Semiconductor Products

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The UNR311200L device is a single, pre-biased bipolar (BJT) transistor designed for RF and microwave applications. It is a high-performance, high-reliability device capable of providing up to 9-GHz operation, and can be used for applications such as high-speed data converters, power amplifiers, and antenna switching.

The UNR311200L is a medium asset, vertical NPN bipolar transistor with a SiGe epitaxial layer and a low-capacitance isolation. It features a high-gain transfer characteristics, with a typical maximum occupied bandwidth (MO BW) of 8 GHz. It provides wide-voltage operation, and is rated for a maximum DC collector current of 200 mA.

The UNR311200L is pre-biased by the emitter voltage and the collector voltage, providing up to 9 dB of gain at frequencies up to 9 GHz. This device is suitable for various high speed applications, including RF and microwave amplifiers, RF switches, pulse generation, and mixer-down conversion circuits. It has an outstanding linearity performance and low distortion.

The UNR311200L has excellent noise performance. It features a low noise figure of only 0.75 dB at 5 GHz and a high third-order intercept of +14 dBm. This device is also good for high-frequency power amplification and mobile and base station applications. It offers high-power breakdown voltage and a high-saturation collector current.

The working principle of the UNR311200L is very simple. It has three terminals: an emitter, a collector and a base. A voltage applied to the base causes a current to flow from the emitter to the base, which in turn causes a current to flow from the collector to the emitter. This current flow, or current gain, is controlled by the base voltage, and this is the basis of the transistor\'s operation.

The UNR311200L is an optimum choice for high-frequency applications due to its high-performance characteristics. Its high gain and low noise figure, combined with its low-capacitance isolation make it ideal for a variety of applications. This device provides wide-voltage operation, and is rated for a maximum DC collector current of 200 mA, and is suitable for RF and microwave amplifiers, RF switches, pulse generation and mixer-down conversion circuits.

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