UNR32A400L Discrete Semiconductor Products

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The UNR32A400L is an integrated monolithic bipolar transistor structure for use with pre-biased applications. The device is composed of an NPN transistor with a built-in bias resistor connected between the base and the emitter. This feature simplifies the design of the pre-biased circuit, eliminating the need to design a separate bias resistor network.

The UNR32A400L is designed for moderate-power switching and pre-biased applications. It is optimized for use with high-voltage switching circuits such as Darlington, cascode, and totem-pole circuits, as well as LED drivers. The device is also suitable for use as a linear gain block in low-noise, high-frequency applications such as amplifiers and oscillators.

The UNR32A400L utilizes an NPN basal structure with 3 leads. The center lead is called the "emitter" and the other two are called the "collector" and the "base", respectively. When sufficient current is supplied to the collector, the device will start to conduct in a forward direction between the emitter and collector leads. This current is called a forward current, or bias current. The current flowing through the base is much smaller compared to the collector current, it\'s usually limited to a few milliamps.

The UNR32A400L is capable of operating in a wide range of temperature range from -55°C to 150°C and can handle up to 200 V, making it an ideal choice for high-voltage applications. It also has a high current gain, or beta, and very low noise characteristics. It can handle up to 350 mA with a maximum base-emitter voltage of 6V.

The UNR32A400L is a favored choice for pre-biased applications because it is simple to use and its performance remains consistent, even when the supply voltage varies. This is due to the combination of the built-in bias resistor and the transistor\'s ability to maintain a constant current gain. This leads to a predictable and consistent performance over operating temperature and voltage ranges.

In summary, the UNR32A400L is an integrated monolithic bipolar transistor designed for use with pre-biased applications. It is optimized for high-voltage switching circuits, LED drivers, and low-noise high-frequency amplifiers. It features a built-in bias resistor, making it ideal for pre-biased applications. It can operate in a wide temperature range and can be used to handle up to 200V and 350mA.

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