UNR31A400L Allicdata Electronics

UNR31A400L Discrete Semiconductor Products

Allicdata Part #:

UNR31A400LTR-ND

Manufacturer Part#:

UNR31A400L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR31A400L datasheetUNR31A400L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: SSSMini3-F1
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 80MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 80mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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UNR31A400L Application Field and Working Principle

The UNR31A400L is a single pre-biased, bipolar junction transistor (BJT), widely used in digital and miniaturized electronics as well as in audio-frequency (AF) circuits. Produced by smaller firms, the UNR31A400L may not be as well known as other widely used devices, but it is capable of delivering high levels of reliability and performance.

The transistor is composed of three regions called the emitter, collector, and the base. It has two junctions - the emitter-base junction and the collector-base junction. The emitter-base junction is forward-biased, while the collector-base junction is reverse-biased. In other words, a specified amount of minority- and majority-carriers spill across the emitter-base junction whereas the collector-base junction involves no electron (or hole) transfer.

The NPN type of the UNR31A400L is characterized by the fact that the current flowing from the collector to the emitter is controlled by the current flowing from the base to the emitter. In the ON state, the base-emitter junction is forward-biased and the base-collector junction is reverse-biased. The gain of the device, or the "common-emitter current gain," is usually specified as β (beta), which is the ratio of the collector current (Ic) to the base current (Ib).

UNR31A400L devices are widely used in a variety of application areas. Its high voltage actions, low power use and greater current gain allow it to function in many applications. In audio frequency (AF) circuits, UNR31A400L devices can provide high power gain at low power levels. As audio frequencies increase, the device’s current gain begins to drop due to thermal drift. Another application is the design of power oscillators. UNR31A400L devices can be used to provide a high level of frequency modulation (FM modulation) with low voltage levels.

In addition, UNR31A400L devices are also used in digital electronics. Due to their low on-resistance and robust nature, UNR31A400L devices are used for switching in low-power circuits. In addition, UNR31A400L devices are also used in analogue circuitry, such as in operational amplifiers. UNR31A400L devices provide large amounts of current gain and low-voltage noise, making them ideal for this type of application.

In summary, the UNR31A400L is an all-purpose, single pre-biased BJT device capable of providing high levels of performance and in a variety of application areas. Its small size, low power consumption and current gain make it suitable for a wide range of circuits. The device can be used in both digital and analogue circuits, providing high current gain and low noise even at high frequencies. The UNR31A400L is, therefore, a widely used device and is often found on boards such as PCs and laptops.

The specific data is subject to PDF, and the above content is for reference

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