UNR32AN00L Discrete Semiconductor Products

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The UNR32AN00L bipolar junction transistor (BJT), is a single, pre-biased transistor featuring a surface-mounted package. This type of BJT is a three-terminal device that can be used for a variety of applications. It is constructed of a single-base layer, a single-collector layer, and a single-emitter layer. The UNR32AN00L is a PNP type BJT, meaning it is designed with a p-doped epitaxial layer on the base and a n-doped epitaxial layer on the emitter.

The primary use of the UNR32AN00Lis as a power BJT switch. It can be used to control currents of 2A or more and withstanding voltages of 800V, making it ideal for high power applications. It can also be used to control small signals as it has a low saturation voltage and good switching characteristics. The maximum frequency for switching applications is 40 kHz.

The UNR32AN00L has a variety of other applications, such as switching, amplifier, and rectifier circuits. It can be used in voltage regulation, motor control, and rectifier applications. As an amplifier, the UNR32AN00L can be used in oscillator circuits, or to amplify small signals. It can also be used to drive relays or small motors. For rectifier circuits, the UNR32AN00L can be used to directly provide a DC voltage from an AC source.

The working principle of the UNR32AN00L BJT is based on the standard BJT structure of an emitter, base, and collector. When a voltage is applied to the base and the collector, the transistor will become forward-biased. This results in current flow from the emitter to the collector, amplifying the signal. The base current is amplified by the gain of the transistor, which is usually denoted as hFE. This is the current gain of the transistor and is a key parameter for understanding a BJT’s performance.

Due to the UNR32AN00L’s large physical size, it is also more resistant to physical stress and can withstand voltages of up to 800 V. It also has a fantastic thermal performance with a maximum collector-emitter saturation voltage of 0.2V at 2A. It features a 4-pin SOIC package which is useful for applications that require high power dissipation. The UNR32AN00L has a variety of applications and is ideal for high power, rectifier, and switching applications.

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