UNR32AMG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR32AMG0LTR-ND |
Manufacturer Part#: |
UNR32AMG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 100MW SSSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR32AMG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SSSMini3-F1 |
Description
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UNR32AMG0L is an integrated bipolar monolithic NPN pre-biased transistor. This transistor was designed for high-power audio signal circuits. It is a great choice for chassis and power applications, as it is a reliable and robust transistor. This transistor is capable of delivering a maximum output power of up to 10 watt, and a maximum collector-emitter voltage of up to 35V. The peak collector current of the UNR32AMG0L is also quite impressive, with it ranging from 1A to 10A. As far as the applications of this transistor are concerned, it can be used in a variety of circuits and applications. For example, it can be used for the amplification of audio signals, in power supplies and inverters, for switching and logic applications, and for the control of motors and other loads. Additionally, it can be used as part of a transistor array, with transistors being connected in a common-base configuration, which is also known as a Darlington pair. In terms of the working principle, this transistor works as a common-base amplifier, as it amplifies a signal input from the base to its collector. This is done by employing the properties of a bipolar junction transistor, or BJT. As voltage is applied to the base of the transistor, electrons are injected into the base, as current will flow through this bipolar junction. This current then flows through the collector-emitter circuit, which generates the output voltage. This is then amplified by the transistor to be of greater magnitude than the base voltage. All in all, the UNR32AMG0L is a great integrated transistor, with many application possibilities. Its powerful peak collector current and maximum output power make it an ideal option for many different types of circuits and applications. Additionally, its common-base configuration makes it a reliable and robust transistor, perfect for a wide variety of circuits.The specific data is subject to PDF, and the above content is for reference
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