UNR32A300L Allicdata Electronics

UNR32A300L Discrete Semiconductor Products

Allicdata Part #:

UNR32A300LTR-ND

Manufacturer Part#:

UNR32A300L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR32A300L datasheetUNR32A300L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: SSSMini3-F1
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 80mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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UNR32A300L is a single, pre-biased bipolar junction transistor (BJT) available in both TO-92 and SOT-23 packages. This can be used in applications where a fixed bias is desired. Bipolar transistors, or BJTs, are active components that are used in a variety of discrete and integrated circuit applications. They are the basic building blocks of analog circuits, providing signal amplification and switching.

In semiconductor technology, a Bipolar Junction Transistor (BJT) is a type of transistor consisting of three different regions, a base, a collector and an emitter. The base is composed of a single layer of material sandwiched between two layers of different material. The collector is composed of two layers of the same material while the emitter is composed of two layers of different material. Electrons and holes flow between the base, collector and emitter and this process leads to an amplification of signals along the base current.

UNR32A300L is a single, pre-biased BJT transistor which eliminates the need for external bias circuits when used in an application. It has been found to be extremely versatile and its characteristics can be tweaked to meet user demands in a wide range of operating conditions. This type of transistor is typically used in power switching and amplification applications, but can also be useful in analog circuits. It also has the advantage of being cost competitive when compared to other bipolar transistors, making it a great option for cost-sensitive applications.

The working principle of UNR32A300L involves two different properties of bipolar transistors, namely the base current and the collector-emitter voltage. The base current can be controlled by applying an external voltage to the base-emitter junction, while the collector-emitter voltage is determined by the relationship between the base current and the impedance at the collector-emitter junction. By controlling these two parameters, the desired output characteristics can be obtained. For example, by adjusting the base current, the transistor can be operated in a linear mode to obtain power amplification, or in a switching mode to control the current through the collector-emitter junction.

In summary, the UNR32A300L is a single, pre-biased bipolar junction transistor (BJT) available in TO-92 and SOT-23 packages. It is used in applications where a fixed bias is desired and it is most commonly used in power switching and amplification applications. Due to its cost competitiveness, it is ideal for cost-sensitive projects. The working principle of the UNR32A300L involves the control of the base current and the collector-emitter voltage, which can be adjusted to obtain the desired characteristics.

The specific data is subject to PDF, and the above content is for reference

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