UNR31A3G0L Allicdata Electronics

UNR31A3G0L Discrete Semiconductor Products

Allicdata Part #:

UNR31A3G0LTR-ND

Manufacturer Part#:

UNR31A3G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR31A3G0L datasheetUNR31A3G0L Datasheet/PDF
Quantity: 10000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 10000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: SSSMini3-F1
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 80MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 80mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The UNR31A3G0L Transistor is a semiconductor device designed to assist in controlling electrical current. It is a single, pre-biased bipolar junction transistor (BJT), which allows an easy transition between an off-state and an on-state. The device is used in various applications and has various functions, such as switching, amplifying signals, and improving the sensitivity of a circuit.

Introduction

The UNR31A3G0L Transistor is a single, pre-biased NPN bipolar junction transistor (BJT). It is designed to have a low on-state voltage drop and is designed for high speed switching operations. The transistor is made up of three electrodes: the collector, base, and emitter. Current flows from the collector to the emitter when a small potential is applied to the base.

Application Field

The UNR31A3G0L Transistor is most commonly used in audio amplifier stages and analog switches. As an amplifier, the device can be used to amplify weak electrical signals. The small voltage applied to the base acts as a control, allowing the device to switch between high and low gain. The device is also used in analog switches, where the transistor is used to switch power between two sources. This allows the user to control the power flow without having to manually switch the sources on and off.

Working Principle

The UNR31A3G0L Transistor works by controlling the flow of current through the device. When a small voltage is applied to the base, the electrons move from the collector to the emitter, which results in current flowing from the collector to the emitter. The device is pre-biased, which means that when there is no voltage applied to the base, a small amount of current can still flow through the device. This allows for easy switching between an on and an off state, as the device does not have to be constantly switched off to stop current from flowing.

Conclusion

The UNR31A3G0L Transistor is a single, pre-biased NPN bipolar junction transistor (BJT). It is used in various applications such as audio amplification, analog switching, and improving the sensitivity of a circuit. The transistor works by controlling the flow of current through the device and is pre-biased so that it can be easily switched between an on and an off state.

The specific data is subject to PDF, and the above content is for reference

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