UNR32AEG0L Allicdata Electronics

UNR32AEG0L Discrete Semiconductor Products

Allicdata Part #:

UNR32AEG0LTR-ND

Manufacturer Part#:

UNR32AEG0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR32AEG0L datasheetUNR32AEG0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1
Description

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The UNR32AEG0L is a single, pre-biased bipolar junction transistor (BJT) used in a range of applications. This transistor delivers considerable power and is capable of operating at a wide range of temperatures. It has the following features:

  • Low collector-emitter saturation voltage.
  • Low base-emitter saturation voltage.
  • High breakdown voltage.
  • High gain quality.
  • Limits reverse leakage current.

The UNR32AEG0L is used in a variety of applications such as:

  • Motor Control.
  • AC to DC current switch.
  • DC to AC current switch.
  • High voltage switching.
  • Driver circuit.

It is particularly suitable for applications that require high voltage operation, such as motor control, as it is able to handle large voltages up to 80V.

The working principle of the UNR32AEG0L is based on the Three-terminal BJT. A BJT is composed of three layers of semiconductor material: the base, collector, and emitter. The base layer is the narrowest, and is the control site for the current flow. The collector layer is the middle layer, and gathers the electrons that are emitted from the base. The emitter layer is thei widest, and is the source of the electrons which enter the transistor.

The working principle is based on the idea of minority carriers, or electrons which travel through the base layer. When a bias voltage is applied to the base layer, the minority carriers move through the base and into the collector layer. Once the electrons reach the collector, they create a current which is used to drive the transistor\'s load. This current can be used to either switch the device on or off, or can be used to control the flow of current.

The key point to remember with the UNR32AEG0L is that it is a pre-biased transistor, meaning that the base-emitter bias is already set. As such, it can be directly plugged into a circuit, making it a convenient and cost effective choice for many applications.

In summary, the UNR32AEG0L is a single, pre-biased bipolar junction transistor that is well suited for power applications. It operates at high voltage, can be plugged directly into a circuit, and has low collector-emitter and base-emitter saturation voltages. All these factors make it an ideal choice for a variety of applications, ranging from motor control to high voltage switching.

The specific data is subject to PDF, and the above content is for reference

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