UNR31A5G0L Allicdata Electronics

UNR31A5G0L Discrete Semiconductor Products

Allicdata Part #:

UNR31A5G0LTR-ND

Manufacturer Part#:

UNR31A5G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR31A5G0L datasheetUNR31A5G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1
Description

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Transistors are electronic devices composed of several fundamental elements including a base, a collector, and an emitter. They are used for amplifying current, voltage, and frequency and for opening and closing circuits. Bipolar junction transistors, or BJTs, are transistor devices that involve two types of semiconductor materials in their functioning. Single switching transistors, such as the UNR31A5G0L, are BJT type transistors that feature a single, pre-biased switching mechanism.

The UNR31A5G0L transistor is a low voltage, low power BJT device manufactured using bipolar technology. It has an emitter-collector breakdown voltage of 5.6V and is most suitable for applications such as local oscillators, converters, amplifiers, switching circuits, and LEDs. With a maximum collector current of 200 mA and a maximum dissipation power of 0.5W, it is widely regulated for use in various electronic components.

The UNR31A5G0L is a single, pre-biased switching transistor. This means that when current is applied to the collector and emitter, the transistor enters a ‘knee’ region. This is the area through which the transistor will transition from its off-state to its saturation state when current flows, allowing it to act as a switching device. This allows the transistor to switch between two states, controlling the amount of electricity that is able to flow through, allowing it to act as an amplifier, oscillator or LED driver.

The UNR31A5G0L also features a transition frequency of up to 1.1 GHz, ensuring accurate and reliable operation even when dealing with high-frequency signals. The collector-base breakdown voltage of 4V also makes it an excellent choice for low voltage applications. Additionally, the high protection provided by the base-emitter junction ensures that the transistor will remain safe even when exposed to transient voltages.

The UNR31A5G0L is a versatile and reliable transistor due to its pre-biased switching mechanism and low-voltage breakdown voltage. It is suitable for use in a wide range of applications, such as LED drivers, switching circuits, oscillators, amplifiers, and more. With its excellent response time, accurate operation, and reliable protection features, the UNR31A5G0L can be depended upon to deliver reliable performance in the most demanding of applications.

The specific data is subject to PDF, and the above content is for reference

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