UNR32A0G0L Allicdata Electronics

UNR32A0G0L Discrete Semiconductor Products

Allicdata Part #:

UNR32A0G0LTR-ND

Manufacturer Part#:

UNR32A0G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR32A0G0L datasheetUNR32A0G0L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Resistor - Base (R1): 47 kOhms
Supplier Device Package: SSSMini3-F1
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Series: --
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 80mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The UNR32A0G0L is one of the most popular types of single pre-biased bipolar junction transistors (BJT) available on the market. A single pre-biased transistor is a device that is designed to operate with a specific voltage across its base-emitter junction, allowing it to operate with a much lower current than an equivalent device that is not pre-biased. This makes them ideal for use in applications where the amount of current is a key factor.

The UNR32A0G0L is typically used in low-power applications such as in audio amplifiers, pulse oscillators, audio selectors, and local oscillators. It is also used in switching applications, such as in power switching, motor control, and relays. In these applications, it is often used to drive switches, control anti-aliasing filters, and provide linearity in pulse-width modulation (PWM) controls.

The transistor consists of a base, emitter, and collector, and is usually fabricated on an n-type substrate. A special type of transistor, known as an emitter-feedback pre-biased transistor, uses both the emitter and base terminals to control the base-emitter voltage of the device. This allows the transistor to operate with a much lower base-emitter voltage than normal, as well as at a much lower power level.

The UNR32A0G0L has a base-emitter voltage range of -4. Many applications require a much lower voltage than this, such as -2 volts for audio systems, -1.5 volts for switching applications, and -0.5 volts for power switching, motor control, and relays. The transistor is also capable of operating at higher voltages, such as +4 volts for switching applications and +5 volts for audio applications.

The working principle of the UNR32A0G0L is simple and straightforward. When a voltage is applied to the base terminal, it forms a diode junction with the emitter. This process releases negative charges, which, in turn, repel the holes built up in the base terminal and cause the device to turn on. The amount of current that flows through the device is determined by the base-emitter voltage.

The base current that flows through the device is very small in comparison to the collector current. This is one of the main advantages of pre-biased transistors, allowing a lower power usage and improved efficiency. The transistor also has a high breakdown voltage, meaning that it can support a range of output voltages without malfunctioning.

The UNR32A0G0L is one of the most popular types of single pre-biased transistors available. Its wide range of applications and superior efficiency make it an ideal choice for a variety of applications and contexts. Its simple working principle and high breakdown voltage also make it valuable in circuits that need to support a range of outputs.

The specific data is subject to PDF, and the above content is for reference

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