UNR321300L Allicdata Electronics

UNR321300L Discrete Semiconductor Products

Allicdata Part #:

UNR321300LTR-ND

Manufacturer Part#:

UNR321300L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR321300L datasheetUNR321300L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: SSSMini3-F1
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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UNR321300L transistors are a form of single, pre-biased (or "fixed") bipolar junction transistors (BJTs). Designed for use in a wide range of applications, UNR321300L transistors feature a general-purpose design that allows for reliable and efficient operation in a variety of circuits.

BJTs are a form of three terminal active semiconductors. Unlike the better-known field-effect transistors (FETs), BJTs are capable of current or voltage amplification, allowing for analog amplification or simple switching applications.

The UNR321300L is a small, radiation-resistant transistor with a high current rating of up to 1.8A. It has a maximum power dissipation of 150mW and a breakdown voltage range of 4V to 18V. This makes it an ideal choice for a wide range of low-power applications, such as amplifiers, switching circuits, and even some high-end digital circuits.

The UNR321300L is characterized by its single pre-biased construction. This means that the transistor comes with a built-in bias current, which reduces the complexity of the design and allows for a simplified circuit layout. In addition, the device features a low noise figure, low voltage drop, and fairly low power dissipation, making it especially well-suited for low-power applications.

The UNR321300L is designed for ease of use and provides several features that make it easy to incorporate into circuits. It has three pins for easy hookup, and its symmetric design allows for quick operation and power up. Additionally, it has an on-state current rating of 4A, making it suitable for a wide range of circuit designs.

The working principle of a single-prebiased BJT is based on the saturation of the transistor. The base-collector junction is normally forward biased, resulting in a saturation of the transistor. This saturation results in a significant voltage drop across the collector-emitter, allowing for a large current flow from the collector to the emitter. This current can be used for amplifying or switching signals, depending on the type of application.

The UNR321300L is an excellent choice for a wide range of applications, ranging from low-power analog circuits to high-end digital circuits. Its low noise figure, low voltage drop, and good current rating make it a versatile choice for many types of circuits. The simplified design of the device also makes it easy to incorporate into custom circuit designs.

The specific data is subject to PDF, and the above content is for reference

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